Electrostatic transfer of epitaxial graphene to glass.
Abstract
We report on a scalable electrostatic process to transfer epitaxial graphene to arbitrary glass substrates, including Pyrex and Zerodur. This transfer process could enable wafer-level integration of graphene with structured and electronically-active substrates such as MEMS and CMOS. We will describe the electrostatic transfer method and will compare the properties of the transferred graphene with nominally-equivalent 'as-grown' epitaxial graphene on SiC. The electronic properties of the graphene will be measured using magnetoresistive, four-probe, and graphene field effect transistor geometries [1]. To begin, high-quality epitaxial graphene (mobility 14,000 cm2/Vs and domains >100 {micro}m2) is grown on SiC in an argon-mediated environment [2,3]. The electrostatic transfer then takes place through the application of a large electric field between the donor graphene sample (anode) and the heated acceptor glass substrate (cathode). Using this electrostatic technique, both patterned few-layer graphene from SiC(000-1) and chip-scale monolayer graphene from SiC(0001) are transferred to Pyrex and Zerodur substrates. Subsequent examination of the transferred graphene by Raman spectroscopy confirms that the graphene can be transferred without inducing defects. Furthermore, the strain inherent in epitaxial graphene on SiC(0001) is found to be partially relaxed after the transfer to the glass substrates.
- Authors:
- Publication Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1035659
- Report Number(s):
- SAND2010-8426C
TRN: US201205%%224
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Conference
- Resource Relation:
- Conference: Proposed for presentation at the MRS 2010 Fall Meeting held November 28-December 3, 2010 in Boston, MA.
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 70 PLASMA PHYSICS AND FUSION TECHNOLOGY; DEFECTS; ELECTRIC FIELDS; ELECTROSTATICS; FIELD EFFECT TRANSISTORS; GLASS; PYREX; RAMAN SPECTROSCOPY; STRAINS; SUBSTRATES
Citation Formats
Ohta, Taisuke, Pan, Wei, Howell, Stephen Wayne, Biedermann, Laura Butler, Beechem, Iii, Thomas Edwin, and Ross, Anthony Joseph, III. Electrostatic transfer of epitaxial graphene to glass.. United States: N. p., 2010.
Web.
Ohta, Taisuke, Pan, Wei, Howell, Stephen Wayne, Biedermann, Laura Butler, Beechem, Iii, Thomas Edwin, & Ross, Anthony Joseph, III. Electrostatic transfer of epitaxial graphene to glass.. United States.
Ohta, Taisuke, Pan, Wei, Howell, Stephen Wayne, Biedermann, Laura Butler, Beechem, Iii, Thomas Edwin, and Ross, Anthony Joseph, III. 2010.
"Electrostatic transfer of epitaxial graphene to glass.". United States.
@article{osti_1035659,
title = {Electrostatic transfer of epitaxial graphene to glass.},
author = {Ohta, Taisuke and Pan, Wei and Howell, Stephen Wayne and Biedermann, Laura Butler and Beechem, Iii, Thomas Edwin and Ross, Anthony Joseph, III},
abstractNote = {We report on a scalable electrostatic process to transfer epitaxial graphene to arbitrary glass substrates, including Pyrex and Zerodur. This transfer process could enable wafer-level integration of graphene with structured and electronically-active substrates such as MEMS and CMOS. We will describe the electrostatic transfer method and will compare the properties of the transferred graphene with nominally-equivalent 'as-grown' epitaxial graphene on SiC. The electronic properties of the graphene will be measured using magnetoresistive, four-probe, and graphene field effect transistor geometries [1]. To begin, high-quality epitaxial graphene (mobility 14,000 cm2/Vs and domains >100 {micro}m2) is grown on SiC in an argon-mediated environment [2,3]. The electrostatic transfer then takes place through the application of a large electric field between the donor graphene sample (anode) and the heated acceptor glass substrate (cathode). Using this electrostatic technique, both patterned few-layer graphene from SiC(000-1) and chip-scale monolayer graphene from SiC(0001) are transferred to Pyrex and Zerodur substrates. Subsequent examination of the transferred graphene by Raman spectroscopy confirms that the graphene can be transferred without inducing defects. Furthermore, the strain inherent in epitaxial graphene on SiC(0001) is found to be partially relaxed after the transfer to the glass substrates.},
doi = {},
url = {https://www.osti.gov/biblio/1035659},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Dec 01 00:00:00 EST 2010},
month = {Wed Dec 01 00:00:00 EST 2010}
}