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Title: Nitrogen-incorporation induced changes in the microstructure of nanocrystalline WO3 thin films

Journal Article · · Thin Solid Films

Nitrogen doped tungsten oxide (WO3) films were grown by reactive magnetron sputter-deposition by varying the nitrogen content in the reactive gas mixture keeping the deposition temperature fixed at 400 C. The crystal structure, surface morphology, chemical composition, and electrical resistivity of nitrogen doped WO3 films were evaluated using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and electrical conductivity measurements. The results indicate that the nitrogen-doping induced changes in the microstructure and electrical properties of WO3 films are significant. XRD measurements coupled with SEM analysis indicates that the increasing nitrogen content decreases the grain size and crystal quality. The nitrogen concentration increases from 0 at.% to 1.35 at.% with increasing nitrogen flow rate from 0 to 20 sccm. The corresponding dc electrical conductivity of the films had shown a decreasing trend with increasing nitrogen content.

Research Organization:
Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Environmental Molecular Sciences Lab. (EMSL)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC05-76RL01830
OSTI ID:
1031432
Report Number(s):
PNNL-SA-79446; THSFAP; 42795; KP1704020; TRN: US201201%%607
Journal Information:
Thin Solid Films, Vol. 520, Issue 5; ISSN 0040-6090
Country of Publication:
United States
Language:
English