Fabrication and Characterization of Self-aligned InAlAs/InGaAsSb/InGaAs Double Heterojunction Bipolar Transistors
Abstract
A trilevel resist system was employed to fabricate self-aligned,submicron emitter finger In0.52Al0.48As/In0.42Ga0.58As0.77Sb0.23/In0.53Ga0.47As double heterojunction bipolar transistors (DHBTs).Selective wet-etchants were used to define the emitter fingers andto form an InGaAs guard-ring around the emitter fingers. Due tothe low energy bandgap of the InGaAsSb base layer and type IIbase-collector junction, a low turn-on voltage of 0.38 V at 1 A/cm2and a high dc current gain of 123.8 for a DHBT with a 0.65 × 8.65μm2 emitter area were obtained. A unity gain cut-off frequency(fT) of 260 GHz and a maximum oscillation frequency (fmax) of 485GHz at JC = 302 kA/cm2 were achieved.
- Authors:
-
- University of Florida
- National Central University, Taiwan
- ORNL
- Publication Date:
- Research Org.:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1028763
- DOE Contract Number:
- AC05-00OR22725
- Resource Type:
- Conference
- Resource Relation:
- Journal Volume: 41; Journal Issue: 6; Conference: 220th ECS Meeting - Boston, Massachusetts, United States of America - 10/9/2011 12:00:00 AM-10/14/2011 12:00:00 AM
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 47 OTHER INSTRUMENTATION; FABRICATION; HETEROJUNCTIONS; OSCILLATIONS; TRANSISTORS
Citation Formats
Lo, C. F., Chang, C. H., Chen, Shu-han, Wang, Sheng-yu, Chyi, Jen-inn, Kravchenko, Ivan, Pearton, S. J., and Ren, F. Fabrication and Characterization of Self-aligned InAlAs/InGaAsSb/InGaAs Double Heterojunction Bipolar Transistors. United States: N. p., 2011.
Web. doi:10.1149/1.3629960.
Lo, C. F., Chang, C. H., Chen, Shu-han, Wang, Sheng-yu, Chyi, Jen-inn, Kravchenko, Ivan, Pearton, S. J., & Ren, F. Fabrication and Characterization of Self-aligned InAlAs/InGaAsSb/InGaAs Double Heterojunction Bipolar Transistors. United States. https://doi.org/10.1149/1.3629960
Lo, C. F., Chang, C. H., Chen, Shu-han, Wang, Sheng-yu, Chyi, Jen-inn, Kravchenko, Ivan, Pearton, S. J., and Ren, F. 2011.
"Fabrication and Characterization of Self-aligned InAlAs/InGaAsSb/InGaAs Double Heterojunction Bipolar Transistors". United States. https://doi.org/10.1149/1.3629960. https://www.osti.gov/servlets/purl/1028763.
@article{osti_1028763,
title = {Fabrication and Characterization of Self-aligned InAlAs/InGaAsSb/InGaAs Double Heterojunction Bipolar Transistors},
author = {Lo, C. F. and Chang, C. H. and Chen, Shu-han and Wang, Sheng-yu and Chyi, Jen-inn and Kravchenko, Ivan and Pearton, S. J. and Ren, F.},
abstractNote = {A trilevel resist system was employed to fabricate self-aligned,submicron emitter finger In0.52Al0.48As/In0.42Ga0.58As0.77Sb0.23/In0.53Ga0.47As double heterojunction bipolar transistors (DHBTs).Selective wet-etchants were used to define the emitter fingers andto form an InGaAs guard-ring around the emitter fingers. Due tothe low energy bandgap of the InGaAsSb base layer and type IIbase-collector junction, a low turn-on voltage of 0.38 V at 1 A/cm2and a high dc current gain of 123.8 for a DHBT with a 0.65 × 8.65μm2 emitter area were obtained. A unity gain cut-off frequency(fT) of 260 GHz and a maximum oscillation frequency (fmax) of 485GHz at JC = 302 kA/cm2 were achieved.},
doi = {10.1149/1.3629960},
url = {https://www.osti.gov/biblio/1028763},
journal = {},
issn = {1938--5862},
number = 6,
volume = 41,
place = {United States},
year = {Sat Oct 01 00:00:00 EDT 2011},
month = {Sat Oct 01 00:00:00 EDT 2011}
}
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