Doping Effects on the Thermoelectric Properties of Cu3SbSe4
Journal Article
·
· Science of Advanced Materials
- Michigan State University, East Lansing
- ORNL
We present the first systematic doping study on the ternary semiconductor Cu3SbSe 4 . We have developed a novel synthesis procedure that produces high-quality polycrystalline samples with hole concentrations an order of magnitude lower than have been reported for the undoped compound. The hole concentration can be increased by adding small amounts of either Ge or Sn on the Sb site. The power factor increases with increasing doping, reaching a maximum value of 16 W/cmK^2 . The thermoelectric properties are optimized for the 2% Sn doped compound which has ZT=0.72 at 630K, rivaling that of state-of-the-art thermoelectric materials in this temperature range.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). High Temperature Materials Lab. (HTML)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- DE-AC05-00OR22725
- OSTI ID:
- 1025837
- Journal Information:
- Science of Advanced Materials, Vol. 3, Issue 4; ISSN 1947-2935
- Country of Publication:
- United States
- Language:
- English
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