Reversible Change in Electrical and Optical Properties in Epitaxially Grown Al-Doped ZnO Thin Films
Aluminum-doped ZnO (AZO) films were epitaxially grown on sapphire (0001) substrates using pulsed laser deposition. As-deposited AZO films had a low resistivity of 8.01 x 10{sup -4} {Omega} cm. However, after annealing at 450 C in air, the electrical resistivity of the AZO films increased to 1.97 x 10{sup -1} {Omega} cm because of a decrease in the carrier concentration. Subsequent annealing of the air-annealed AZO films in H{sub 2} recovered the electrical conductivity of the AZO films. In addition, the conductivity change was reversible upon repeated air and H{sub 2} annealing. A photoluminescence study showed that oxygen interstitial (O{sub i}) is a critical material parameter allowing for the reversible control of the electrical conducting properties of AZO films.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1022339
- Journal Information:
- Journal of Applied Physics, Vol. 104, Issue 7, 2008; Related Information: Article No. 073706; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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