Scaling trends in SET pulse widths in Sub-100 nm bulk CMOS processes.
Conference
·
OSTI ID:1021643
Digital single-event transient (SET) measurements in a bulk 65-nm process are compared to transients measured in 130-nm and 90-nm processes. The measured SET widths are shorter in a 65-nm test circuit than SETs measured in similar 90-nm and 130-nm circuits, but, when the factors affecting the SET width measurements (in particular pulse broadening and the parasitic bipolar effect) are considered, the actual SET width trends are found to be more complex. The differences in the SET widths between test circuits can be attributed in part to differences in n-well contact area. These results help explain some of the inconsistencies in SET measurements presented by various researchers over the past few years.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1021643
- Report Number(s):
- SAND2010-4813C; TRN: US201117%%237
- Resource Relation:
- Conference: Proposed for presentation at the Nuclear Space and Radiation Effects Conference held July 19-23, 2010 in Denver, CO.
- Country of Publication:
- United States
- Language:
- English
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