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Title: Si nanoparticle - Er{sup 3+} coupling through contact in as-deposited nanostructured films.

Journal Article · · Appl. Phys. Lett.
DOI:https://doi.org/10.1063/1.3579523· OSTI ID:1020692

The efficient excitation of Er{sup 3+} ions through contact with Si nanoparticles (NPs) is demonstrated. A nanostructured doping process has been developed that leads to contact between Si NPs formed in situ and optically-active Er{sup 3+} ions embedded in Al{sub 2}O{sub 3}. This is achieved by independent and consecutive deposition of the dopants and matrix. The Si NP-Er{sup 3+} contact regime enhances the probability of efficient interaction due to the local spatial overlap of the electronic states of the Er{sup 3+} and of the Si NP exciton, enabling energy transfer by interband exciton recombination. This leads to up to 53% of the Er{sup 3+} ions being excited in as-deposited films.

Research Organization:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Organization:
KC020401B
DOE Contract Number:
DE-AC02-06CH11357
OSTI ID:
1020692
Report Number(s):
ANL/CNM/JA-69716; TRN: US1103768
Journal Information:
Appl. Phys. Lett., Vol. 98, Issue 15 ; Apr. 11, 2011
Country of Publication:
United States
Language:
ENGLISH