Si nanoparticle - Er{sup 3+} coupling through contact in as-deposited nanostructured films.
- Center for Nanoscale Materials
The efficient excitation of Er{sup 3+} ions through contact with Si nanoparticles (NPs) is demonstrated. A nanostructured doping process has been developed that leads to contact between Si NPs formed in situ and optically-active Er{sup 3+} ions embedded in Al{sub 2}O{sub 3}. This is achieved by independent and consecutive deposition of the dopants and matrix. The Si NP-Er{sup 3+} contact regime enhances the probability of efficient interaction due to the local spatial overlap of the electronic states of the Er{sup 3+} and of the Si NP exciton, enabling energy transfer by interband exciton recombination. This leads to up to 53% of the Er{sup 3+} ions being excited in as-deposited films.
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- KC020401B
- DOE Contract Number:
- DE-AC02-06CH11357
- OSTI ID:
- 1020692
- Report Number(s):
- ANL/CNM/JA-69716; TRN: US1103768
- Journal Information:
- Appl. Phys. Lett., Vol. 98, Issue 15 ; Apr. 11, 2011
- Country of Publication:
- United States
- Language:
- ENGLISH
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