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Title: Synthesis and Optical Properties of GaN/ZnO Solid Solution Nanocrystals

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.3428393· OSTI ID:1019714

We devised a synthesis route to prepare narrow band gap GaN/ZnO solid solution nanocrystals via nitriding a homogeneous Ga-Zn-O nanoprecursor. The nanocrystals were characterized by several following methods: x-ray diffractometer, transmission electron microscopy, ultraviolet-visible diffuse reflection, and Raman spectroscopy. Here, we can control the composition of nanocrystals by the nitridation temperature. From 550 to 850 C, the corresponding crystalline size varies from 6.1 to 27 nm. It has been demonstrated that the sample prepared at 650 C had the narrowest band gap of 2.21 eV. Microstructural investigations show that the (101) surface is the predominantly exposed one for the GaN/ZnO solid solution nanocrystals. We also discuss the influence of chemical disorder based on the Raman spectra acquired.

Research Organization:
Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source
Sponsoring Organization:
DOE - OFFICE OF SCIENCE
DOE Contract Number:
DE-AC02-98CH10886
OSTI ID:
1019714
Report Number(s):
BNL-95560-2011-JA; APPLAB; TRN: US201115%%354
Journal Information:
Applied Physics Letters, Vol. 96, Issue 18; ISSN 0003-6951
Country of Publication:
United States
Language:
English

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