A versatile masking process for plasma etched backside via holes in GaAs
We have developed a versatile backside via patterning process for a visible transmission modulator application. The vias are processed on mechanically thinned {approximately}100 {mu}m thick GaAs using a {approximately}45 {mu}m thick, negative tone, photo definable Polyimide mask and RIE plasma etching. The Polyimide masking process was found to be superior in both etch resistance and ease of use (more robust process, thicker, straighter sidewall Profile films,were more easily attained) to masking with standard optical photoresist. With the improved etch resistance (GaAs-to-polyimide etch selectivities > 10:1) we were able to Optimize Cl{sub 2}-based plasma chemistries and etching conditions to achieve high GaAs etch rates in the RIE exceeding 5.0 {mu}m/min. These etch optimization results along with our novel via patterning process are reported in this paper.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 10186430
- Report Number(s):
- SAND-94-2200C; CONF-9411132-2; ON: DE94019176; BR: GB0103012
- Resource Relation:
- Conference: Topical conference on the synthesis and processing of electronic materials,San Francisco, CA (United States),13-18 Nov 1994; Other Information: PBD: [1994]
- Country of Publication:
- United States
- Language:
- English
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