Electrical and thermal conductivity of low temperature CVD graphene: the effect of disorder
- ORNL
In this paper we present a study of graphene produced by chemical vapor deposition (CVD) under different conditions with the main emphasis on correlating the thermal and electrical properties with the degree of disorder. Graphene grown by CVD on Cu and Ni catalysts demonstrates the increasing extent of disorder at low deposition temperatures as revealed by the Raman peak ratio, I{sub G}/I{sub D}. We relate this ratio to the characteristic domain size, L{sub a}, and investigate the electrical and thermal conductivity of graphene as a function of L{sub a}. The electrical resistivity, {rho}, measured on graphene samples transferred onto SiO{sub 2}/Si substrates shows linear correlation with L{sub a}{sup -1}. The thermal conductivity, K, measured on the same graphene samples suspended on silicon pillars, on the other hand, appears to have a much weaker dependence on L{sub a}, close to K {approx} L{sub a}{sup 1/3}. It results in an apparent {rho} {approx} K{sup 3} correlation between them. Despite the progressively increasing structural disorder in graphene grown at lower temperatures, it shows remarkably high thermal conductivity (10{sup 2}-10{sup 3} W K{sup -1} m{sup -1}) and low electrical (10{sup 3}-3 x 10{sup 5} {Omega}) resistivities suitable for various applications.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Shared Research Equipment Collaborative Research Center
- Sponsoring Organization:
- USDOE Laboratory Directed Research and Development (LDRD) Program
- DOE Contract Number:
- DE-AC05-00OR22725
- OSTI ID:
- 1018598
- Journal Information:
- Nanotechnology, Vol. 22, Issue 27
- Country of Publication:
- United States
- Language:
- English
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