Erbium Doping Effects on the Conduction Band Edge in Germanium Nanocrystals

Journal Article · Mon May 16 00:00:00 EDT 2011 · Applied Physics Letters, 98(20):Article No. 203107

DOI:https://doi.org/10.1063/1.3592999· OSTI ID:1016443

Meulenberg, Robert W; Willey, Trevor M; Lee, Jonathan R; Terminello, Louis J; Van Buren, T

We have produced erbium-doped germanium nanocrystals (NCs) using a new two cell physical vapor deposition system. Using element specific x-ray techniques (absorption and photoemission), we are able to probe the chemical environment of Er in the Ge NCs. Evidence for the optically active Er3+ state is seen at low Er concentrations, with a disruption of NC formation at high Er concentrations. The x-ray absorption measurements suggest that the Er occupies lattice sites near the surface of the NC. Analysis of the quantum confinement effect with Er doping suggests that the native quantum properties of the Ge NC are maintained at low Er concentrations.

• Research Organization: Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC05-76RL01830
• OSTI ID: 1016443
• Report Number(s): PNNL-SA-79949; TRN: US201112%%335
• Journal Information: Applied Physics Letters, 98(20):Article No. 203107, Vol. 98, Issue 20
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ABSORPTION
CONFINEMENT
ERBIUM
GERMANIUM
PHOTOEMISSION
PHYSICAL VAPOR DEPOSITION
PROBES
XAS/PES
Erbium Doping
Conduction Band Edge
Germanium Nanocrystals