Paramagnetic point defects in amorphous thin films of SiO{sub 2} and Si{sub 3}N{sub 4}: An update
- Army Research Lab., Fort Monmouth, NJ (United States)
- Sandia National Labs., Albuquerque, NM (United States)
Recent research on point defects in thin films of SiO{sub 2} and Si{sub 3}SN{sub 4} on Si is presented and reviewed. In SiO{sub 2} it is now clear that no one type of E{prime} center is the sole source of radiation-induced positive charge; hydrogenous moieties or other types of E{prime} are proposed. Molecular orbital theory and easy passivation of E{prime} by H{sub 2} suggest that released H might depassivate P{sub b} sites. A charged E{prime}{sub {delta}} center has been seen in Cl-free SIMOX and thermal oxide film, and it is reassigned to an electron delocalized over four O{sub 3}{equivalent_to}Si units around a fifth Si. In Si{sub 3}N{sub 4} a new model for the amphoteric charging of Si{equivalent_to}N{sub 3} moieties is based on local shifts in defect energy with respect to the Fermi level, arising from nonuniform composition; it does not assume negative-U electron correlation. A new defect NN{sub 2}{sup 0} has been identified, with dangling orbital on a 2-coordinated N atom bonded to another N.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 10159896
- Report Number(s):
- SAND-94-1430C; CONF-940529-13; ON: DE94013769; BR: GB0103012
- Resource Relation:
- Conference: 185. Electrochemical Society meeting,San Francisco, CA (United States),22-27 May 1994; Other Information: PBD: [1994]
- Country of Publication:
- United States
- Language:
- English
Similar Records
Inherent paramagnetic defects in layered Si/SiO{sub 2} superstructures with Si nanocrystals
Electron spin resonance analysis of EP center interactions with H{sub 2}: Evidence for a localized EP center structure