A temperature dependent SPICE macro-model for power MOSFETs
Technical Report
·
OSTI ID:10152283
A power MOSFET macro-model for use with the circuit simulator SPICE has been developed suitable for use over the temperature range of {minus}55 to 125{degrees}C. The model is comprised of a single parameter set with the temperature dependence accessed through the SPICE TEMP card. This report describes in detail the development of the model and the extraction algorithms used to obtain model parameters. The extraction algorithms are described in sufficient detail to allow for automated measurements which in turn allows for rapid and cost effective development of an accurate SPICE model for any power MOSFET. 22 refs.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 10152283
- Report Number(s):
- SAND-92-0852; ON: DE92015386
- Resource Relation:
- Other Information: PBD: May 1992
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
99 GENERAL AND MISCELLANEOUS//MATHEMATICS, COMPUTING, AND INFORMATION SCIENCE
MOSFET
TEMPERATURE DEPENDENCE
ELECTRONIC CIRCUITS
S CODES
MATHEMATICAL MODELS
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
ALGORITHMS
LEAKAGE CURRENT
BREAKDOWN
COMPUTERIZED SIMULATION
426000
990200
COMPONENTS
ELECTRON DEVICES AND CIRCUITS
MATHEMATICS AND COMPUTERS
99 GENERAL AND MISCELLANEOUS//MATHEMATICS, COMPUTING, AND INFORMATION SCIENCE
MOSFET
TEMPERATURE DEPENDENCE
ELECTRONIC CIRCUITS
S CODES
MATHEMATICAL MODELS
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
ALGORITHMS
LEAKAGE CURRENT
BREAKDOWN
COMPUTERIZED SIMULATION
426000
990200
COMPONENTS
ELECTRON DEVICES AND CIRCUITS
MATHEMATICS AND COMPUTERS