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Title: Ga-doped ZnO grown by pulsed laser deposition in H2: the roles of Ga and H

Abstract

Highly conductive thin films of ZnO doped with Ga were grown by pulsed-laser deposition (PLD) with 10 mTorr of H2 in the growth chamber. Compared with a more conventional method of producing conductive films of ZnO, i.e., growth in O2 followed by annealing in forming gas (5% H2 in Ar), the H2 method requires no post-growth anneal and also produces higher carrier concentrations and lower resistivities with better depth uniformity. As an example, a 65-nm-thick sample had a room-temperature mobility of 32 cm2/V-s, a concentration of 6.8 x 1020 cm-3, and a resistivity of 2.9 x 10^-4 ohm-cm. From a scattering model, the donor and acceptor concentrations were calculated as 8.9 x 1020 and 2.1 x 10^20 cm-3, respectively, as compared to the Ga and H concentrations of 11 x 10^20 and 1 x 10^20 cm-3. Thus, H does not play a significant role as a donor in this type of ZnO

Authors:
; ; ; ;
Publication Date:
Research Org.:
Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Environmental Molecular Sciences Lab. (EMSL)
Sponsoring Org.:
USDOE
OSTI Identifier:
1012859
Report Number(s):
PNNL-SA-74572
35200; KC0203020; TRN: US201110%%330
DOE Contract Number:  
AC05-76RL01830
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology A--Vacuum, Surfaces and Films, 29(3):Article No.: 03A102
Additional Journal Information:
Journal Volume: 29; Journal Issue: 3
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ZINC OXIDES; DOPED MATERIALS; GALLIUM; DEPOSITION; LASER-RADIATION HEATING; THIN FILMS; CATALYTIC EFFECTS; HYDROGEN; ELECTRIC CONDUCTIVITY; DATA; transparent conductors, ZnO, Pulsed laser deposition, thin film; Environmental Molecular Sciences Laboratory

Citation Formats

Look, David, Droubay, Timothy C., McCloy, John S., Zhu, Zihua, and Chambers, Scott A. Ga-doped ZnO grown by pulsed laser deposition in H2: the roles of Ga and H. United States: N. p., 2011. Web. doi:10.1116/1.3523296.
Look, David, Droubay, Timothy C., McCloy, John S., Zhu, Zihua, & Chambers, Scott A. Ga-doped ZnO grown by pulsed laser deposition in H2: the roles of Ga and H. United States. https://doi.org/10.1116/1.3523296
Look, David, Droubay, Timothy C., McCloy, John S., Zhu, Zihua, and Chambers, Scott A. 2011. "Ga-doped ZnO grown by pulsed laser deposition in H2: the roles of Ga and H". United States. https://doi.org/10.1116/1.3523296.
@article{osti_1012859,
title = {Ga-doped ZnO grown by pulsed laser deposition in H2: the roles of Ga and H},
author = {Look, David and Droubay, Timothy C. and McCloy, John S. and Zhu, Zihua and Chambers, Scott A.},
abstractNote = {Highly conductive thin films of ZnO doped with Ga were grown by pulsed-laser deposition (PLD) with 10 mTorr of H2 in the growth chamber. Compared with a more conventional method of producing conductive films of ZnO, i.e., growth in O2 followed by annealing in forming gas (5% H2 in Ar), the H2 method requires no post-growth anneal and also produces higher carrier concentrations and lower resistivities with better depth uniformity. As an example, a 65-nm-thick sample had a room-temperature mobility of 32 cm2/V-s, a concentration of 6.8 x 1020 cm-3, and a resistivity of 2.9 x 10^-4 ohm-cm. From a scattering model, the donor and acceptor concentrations were calculated as 8.9 x 1020 and 2.1 x 10^20 cm-3, respectively, as compared to the Ga and H concentrations of 11 x 10^20 and 1 x 10^20 cm-3. Thus, H does not play a significant role as a donor in this type of ZnO},
doi = {10.1116/1.3523296},
url = {https://www.osti.gov/biblio/1012859}, journal = {Journal of Vacuum Science and Technology A--Vacuum, Surfaces and Films, 29(3):Article No.: 03A102},
number = 3,
volume = 29,
place = {United States},
year = {Tue Jan 11 00:00:00 EST 2011},
month = {Tue Jan 11 00:00:00 EST 2011}
}