Hard x-ray nano patterning using a sectioned multilayer.

Journal Article · Sat Jan 01 00:00:00 EST 2011 · J. Appl. Phys.

DOI:https://doi.org/10.1063/1.3552589· OSTI ID:1012814

Lee, S Y; Cho, I H; Kim, J M; Yan, H; Conley, R; Liu, C; Macrander, A T; Maser, J; Stephenson, G B; Kang, H C; Noh, D Y ^[1]

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1. Materials Science Division

We report a hard x-ray patterning capable of drawing lines with a width below 100 nm using x-rays at 0.165 nm. A specially prepared mask based on multilayer growth technology was used as an x-ray mask effectively. The x-ray Talbot effect in near field was investigated and utilized in the patterning. Since multilayers with a few nanometer layer spacing are readily available, the proposed hard x-ray nano patterning, free of the limit imposed by the Rayleigh criterion in optical range, can potentially be an ultimate optical lithography technique.

• Research Organization: Argonne National Lab. (ANL), Argonne, IL (United States)
• Sponsoring Organization: USDOE Office of Science (SC); National Research Foundation - Korea
• DOE Contract Number: DE-AC02-06CH11357
• OSTI ID: 1012814
• Report Number(s): ANL/MSD/JA-69994; TRN: US201110%%323
• Journal Information: J. Appl. Phys., Vol. 109, Issue 2011
• Country of Publication: United States
• Language: ENGLISH

Related Subjects

42 ENGINEERING
77 NANOSCIENCE AND NANOTECHNOLOGY
HARD X RADIATION
PATTERN RECOGNITION
NANOSTRUCTURES
MASKING
MACHINING