Etch-free formation of porous silicon by high-energy ion irradiation

Journal Article · Sat Jan 01 00:00:00 EST 2011 · Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

DOI:https://doi.org/10.1016/j.nimb.2011.01.009· OSTI ID:1010583

Perez-Bergquist, Dr. Alejandro G. ^[1]; Naab, Fabian U. ^[2]; Zhang, Yanwen ^[3]; Wang, Prof. Lumin ^[2]

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1. Los Alamos National Laboratory (LANL)
2. University of Michigan
3. ORNL

In this study, porous silicon was fabricated without any chemical etching by self-ion implantation of crystalline Si performed at high temperature and at high fluences. The irradiated silicon samples, which remained crystalline under high temperature ion irradiation, exhibited an increased porous fraction with increasing sample temperature at a given fluence, up to the maximum tested temperature of 650 C. Extremely high ion fluences of at least 2 1018 ions/cm2 were necessary to produce significant void growth. Comparisons between the porous silicon structures and irradiation-induced porous networks in Ge, GaSb, and InSb are made, and differences in the formation conditions for these porous networks are discussed.

• Research Organization: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
• Sponsoring Organization: USDOE Office of Science (SC)
• DOE Contract Number: DE-AC05-00OR22725
• OSTI ID: 1010583
• Journal Information: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 269, Issue 6; ISSN 0168-583X
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ETCHING
IRRADIATION
SILICON
Ion irradiation
Porous silicon
Extreme irradiation conditions