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Title: Collisional energy deposition threshold for extended damage depths in ion-implanted silicates

Abstract

Many properties of implanted fused silica (e.g., surface stress, hardness) exhibit maximum implantation-induced changes for collisional energy deposition values of {approximately}10{sup 20} keV/cm{sup 3}. We have observed a second critical energy deposition threshold value of about 10{sup 22} keV/cm{sup 3} in stress and hardness measurements as well as in many other experiments on silicate glasses (leaching, alkali depletion, etching rate, gaseous implant redistribution). The latter show evidence for damage depths exceeding TRIM ranges by about a factor of 2. For crystalline quartz, a similar threshold value has been found for extended damage depths (greater than TRIM) for 250 kev ions (H-Au) as measured by RBS and interference fringes. This phenomenon at high damage deposition energy may involve the large stress gradients between damaged and undamaged regions and the much increased diffusion coefficient for defect transport. 13 refs., 6 figs.

Authors:
 [1];  [2];  [3]; ; ;  [4];  [5]
  1. Sandia National Labs., Albuquerque, NM (United States)
  2. Consorzio INFM, Dipartimento di Chimica Fisica, Universita di Venezia, (Italy)
  3. Centro Ricerche Montedipe, Porto Marghera (Italy)
  4. Consorzio INFM, Dipartimento di Fisica, Universita di Padova, (Italy)
  5. Consorzio INFM, Dipartimento di Fisica, Universita di Trento, Povo (Italy)
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
10105811
Report Number(s):
SAND-91-1635C; CONF-911202-4
ON: DE92004737
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Conference
Resource Relation:
Conference: Annual fall meeting of the Materials Research Society (MRS),Boston, MA (United States),2-6 Dec 1991; Other Information: PBD: [1991]
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICATES; ION IMPLANTATION; PHYSICAL RADIATION EFFECTS; HARDNESS; ETCHING; QUARTZ; CRYSTAL DEFECTS; 360605; RADIATION EFFECTS

Citation Formats

Arnold, G W, Battaglin, G, Boscolo-Boscoletto, A, Caccavalle, F, De Marchi, G, Mazzoldi, P, and Miotello, A. Collisional energy deposition threshold for extended damage depths in ion-implanted silicates. United States: N. p., 1991. Web.
Arnold, G W, Battaglin, G, Boscolo-Boscoletto, A, Caccavalle, F, De Marchi, G, Mazzoldi, P, & Miotello, A. Collisional energy deposition threshold for extended damage depths in ion-implanted silicates. United States.
Arnold, G W, Battaglin, G, Boscolo-Boscoletto, A, Caccavalle, F, De Marchi, G, Mazzoldi, P, and Miotello, A. 1991. "Collisional energy deposition threshold for extended damage depths in ion-implanted silicates". United States.
@article{osti_10105811,
title = {Collisional energy deposition threshold for extended damage depths in ion-implanted silicates},
author = {Arnold, G W and Battaglin, G and Boscolo-Boscoletto, A and Caccavalle, F and De Marchi, G and Mazzoldi, P and Miotello, A},
abstractNote = {Many properties of implanted fused silica (e.g., surface stress, hardness) exhibit maximum implantation-induced changes for collisional energy deposition values of {approximately}10{sup 20} keV/cm{sup 3}. We have observed a second critical energy deposition threshold value of about 10{sup 22} keV/cm{sup 3} in stress and hardness measurements as well as in many other experiments on silicate glasses (leaching, alkali depletion, etching rate, gaseous implant redistribution). The latter show evidence for damage depths exceeding TRIM ranges by about a factor of 2. For crystalline quartz, a similar threshold value has been found for extended damage depths (greater than TRIM) for 250 kev ions (H-Au) as measured by RBS and interference fringes. This phenomenon at high damage deposition energy may involve the large stress gradients between damaged and undamaged regions and the much increased diffusion coefficient for defect transport. 13 refs., 6 figs.},
doi = {},
url = {https://www.osti.gov/biblio/10105811}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Dec 31 00:00:00 EST 1991},
month = {Tue Dec 31 00:00:00 EST 1991}
}

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