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Title: Analysis of the thermoelectric properties of n-type ZnO

Abstract

We report an investigation of the temperature- and doping-dependent thermoelectric behavior of n-type ZnO. The results are based on a combination of experimental data from the literature and calculated transport functions obtained from Boltzmann transport theory applied to the first-principles electronic structure. From this we obtain the dependence of the figure of merit ZT on doping and temperature. We find that improvement of the lattice thermal conductivity is essential for obtaining high ZT in n-type ZnO.

Authors:
 [1];  [2];  [1]
  1. IHPC, Singapore
  2. ORNL
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1010579
DOE Contract Number:  
DE-AC05-00OR22725
Resource Type:
Journal Article
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 83; Journal Issue: 11; Journal ID: ISSN 1098--0121
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ELECTRONIC STRUCTURE; PERFORMANCE; THERMAL CONDUCTIVITY; THERMOELECTRIC PROPERTIES; TRANSPORT; TRANSPORT THEORY

Citation Formats

Ong, Khuong P, Singh, David J, and Wu, Ping. Analysis of the thermoelectric properties of n-type ZnO. United States: N. p., 2011. Web. doi:10.1103/PhysRevB.83.115110.
Ong, Khuong P, Singh, David J, & Wu, Ping. Analysis of the thermoelectric properties of n-type ZnO. United States. https://doi.org/10.1103/PhysRevB.83.115110
Ong, Khuong P, Singh, David J, and Wu, Ping. 2011. "Analysis of the thermoelectric properties of n-type ZnO". United States. https://doi.org/10.1103/PhysRevB.83.115110.
@article{osti_1010579,
title = {Analysis of the thermoelectric properties of n-type ZnO},
author = {Ong, Khuong P and Singh, David J and Wu, Ping},
abstractNote = {We report an investigation of the temperature- and doping-dependent thermoelectric behavior of n-type ZnO. The results are based on a combination of experimental data from the literature and calculated transport functions obtained from Boltzmann transport theory applied to the first-principles electronic structure. From this we obtain the dependence of the figure of merit ZT on doping and temperature. We find that improvement of the lattice thermal conductivity is essential for obtaining high ZT in n-type ZnO.},
doi = {10.1103/PhysRevB.83.115110},
url = {https://www.osti.gov/biblio/1010579}, journal = {Physical Review B},
issn = {1098--0121},
number = 11,
volume = 83,
place = {United States},
year = {Sat Jan 01 00:00:00 EST 2011},
month = {Sat Jan 01 00:00:00 EST 2011}
}