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Title: Advanced atom chips with two metal layers.

Abstract

A design concept, device layout, and monolithic microfabrication processing sequence have been developed for a dual-metal layer atom chip for next-generation positional control of ultracold ensembles of trapped atoms. Atom chips are intriguing systems for precision metrology and quantum information that use ultracold atoms on microfabricated chips. Using magnetic fields generated by current carrying wires, atoms are confined via the Zeeman effect and controllably positioned near optical resonators. Current state-of-the-art atom chips are single-layer or hybrid-integrated multilayer devices with limited flexibility and repeatability. An attractive feature of multi-level metallization is the ability to construct more complicated conductor patterns and thereby realize the complex magnetic potentials necessary for the more precise spatial and temporal control of atoms that is required. Here, we have designed a true, monolithically integrated, planarized, multi-metal-layer atom chip for demonstrating crossed-wire conductor patterns that trap and controllably transport atoms across the chip surface to targets of interest.

Authors:
; ; ;
Publication Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1005059
Report Number(s):
SAND2010-8586
TRN: US201106%%7
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 77 NANOSCIENCE AND NANOTECHNOLOGY; ATOMS; CONTAINMENT SYSTEMS; FABRICATION; LAYERS; METALS; QUANTUM INFORMATION; RESONATORS; TRANSPORT; TRAPS; ZEEMAN EFFECT; DESIGN

Citation Formats

Stevens, James E, Blain, Matthew Glenn, Benito, Francisco M, and Biedermann, Grant. Advanced atom chips with two metal layers.. United States: N. p., 2010. Web. doi:10.2172/1005059.
Stevens, James E, Blain, Matthew Glenn, Benito, Francisco M, & Biedermann, Grant. Advanced atom chips with two metal layers.. United States. https://doi.org/10.2172/1005059
Stevens, James E, Blain, Matthew Glenn, Benito, Francisco M, and Biedermann, Grant. 2010. "Advanced atom chips with two metal layers.". United States. https://doi.org/10.2172/1005059. https://www.osti.gov/servlets/purl/1005059.
@article{osti_1005059,
title = {Advanced atom chips with two metal layers.},
author = {Stevens, James E and Blain, Matthew Glenn and Benito, Francisco M and Biedermann, Grant},
abstractNote = {A design concept, device layout, and monolithic microfabrication processing sequence have been developed for a dual-metal layer atom chip for next-generation positional control of ultracold ensembles of trapped atoms. Atom chips are intriguing systems for precision metrology and quantum information that use ultracold atoms on microfabricated chips. Using magnetic fields generated by current carrying wires, atoms are confined via the Zeeman effect and controllably positioned near optical resonators. Current state-of-the-art atom chips are single-layer or hybrid-integrated multilayer devices with limited flexibility and repeatability. An attractive feature of multi-level metallization is the ability to construct more complicated conductor patterns and thereby realize the complex magnetic potentials necessary for the more precise spatial and temporal control of atoms that is required. Here, we have designed a true, monolithically integrated, planarized, multi-metal-layer atom chip for demonstrating crossed-wire conductor patterns that trap and controllably transport atoms across the chip surface to targets of interest.},
doi = {10.2172/1005059},
url = {https://www.osti.gov/biblio/1005059}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Dec 01 00:00:00 EST 2010},
month = {Wed Dec 01 00:00:00 EST 2010}
}