Generalized Electron Counting in Determination of Metal-Induced Reconstruction of Compound Semiconductor Surfaces
Journal Article
·
· Physical Review Letters
- Chinese Academy of Sciences
- International Center for Quantum Structures and Institute of Physics, China
- National Renewable Energy Laboratory (NREL)
- ORNL
Based on theoretical analysis, first-principles calculations, and experimental observations, we establish a generic guiding principle, embodied in generalized electron counting (GEC), that governs the surface reconstruction of compound semiconductors induced by different metal adsorbates. Within the GEC model, the adsorbates serve as an electron bath, donating or accepting the right number of electrons as the host surface chooses a specific reconstruction that obeys the classic electron-counting model. The predictive power of the GEC model is illustrated for a wide range of metal adsorbates.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- DE-AC05-00OR22725
- OSTI ID:
- 1003652
- Journal Information:
- Physical Review Letters, Vol. 97, Issue 12; ISSN 0031--9007
- Country of Publication:
- United States
- Language:
- English
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