Growth of Lanthanum Maganate Buffer Layers for Coated Conductors via a Metal-Organic Decomposition Process

Journal Article · Sat Jan 01 00:00:00 EST 2005 · IEEE Transactions on Applied Superconductivity

DOI:https://doi.org/10.1109/TASC.2005.848702· OSTI ID:1003197

Venkataraman, Kartik NMN ^[1]; Hellstrom, E. E. ^[2]; Paranthaman, Mariappan Parans ^[1]

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1. ORNL
2. University of Wisconsin, Madison

Perovskite LaMnO{sub 3} (LMO) in thin film embodiment has been identified as a potential candidate for use as a buffer layer in coated conductors. This paper delineates the process-properties relationships investigated for the metal-organic decomposition (MOD) growth of LMO thin films on bare cube-textured Ni-W tape sections. Epitaxial films of pseudocubic perovskite LMO were obtained for samples fired at 1100 C in a humidified forming gas (Ar/4% H{sub 2}, P{sub H{sub 2}O}-2 Torr) ambient atmosphere. The surface morphology, epitaxy, and composition of the films are reported.

• Research Organization: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
• Sponsoring Organization: OE USDOE - Office of Electric Transmission and Distribution
• DOE Contract Number: DE-AC05-00OR22725
• OSTI ID: 1003197
• Journal Information: IEEE Transactions on Applied Superconductivity, Vol. 15, Issue 2; ISSN 1051--8223
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BUFFERS
EPITAXY
CRYSTAL GROWTH
LANTHANUM OXIDES
MANGANESE OXIDES
MORPHOLOGY
THIN FILMS
FABRICATION
SUPERCONDUCTORS
COATINGS
CHEMICAL COMPOSITION