Detection of Amorphous Silica in Air-Oxidized Ti3SiC2 at 500-1000°C by NMR and SIMS
Journal Article
·
· Key Engineering Materials (Online)
- Curtin U.
The use of secondary-ion mass spectrometry (SIMS), nuclear magnetic resonance (NMR) and transmission electron microscopy (TEM) to detect the existence of amorphous silica in Ti3SiC2 oxidised at 500-1000 ºC is described. The formation of an amorphous SiO2 layer and its growth in thickness with temperature was monitored using dynamic SIMS. Results of NMR and TEM verify for the first time the direct evidence of amorphous silica formation during the oxidation of Ti3SiC2 at 1000 ºC.
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 1002805
- Journal Information:
- Key Engineering Materials (Online), Vol. 434-435, Issue 2010; ISSN 1662-9795
- Country of Publication:
- United States
- Language:
- ENGLISH
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