Irradiation-induced defect clustering and amorphization in silicon carbide

Journal Article · Wed Dec 01 00:00:00 EST 2010 · Journal of Materials Research, 25(12):2349-2353

DOI:https://doi.org/10.1557/jmr.2010.0292· OSTI ID:1002182

Weber, William J; Gao, Fei

Previous computer simulations of multiple 10 keV Si cascades in 3C-SiC demonstrated that many damage-state properties exhibit relatively smooth, but noticeably different, dose dependencies. Recent analysis of these archived damage-state properties reveals more complex relationships between system energy, swelling, energy per defect, relative disorder, elastic modulus and elastic constant, C11. These relationships provide evidence for the onset of defect clustering and amorphization processes, both of which appear to be driven by local energy and elastic instabilities from the accumulation of defects. The results provide guidance on experimental approaches to reveal the onset of these processes.

• Research Organization: Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Environmental Molecular Sciences Lab. (EMSL)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC05-76RL01830
• OSTI ID: 1002182
• Report Number(s): PNNL-SA-70849; 34899; KC0201020
• Journal Information: Journal of Materials Research, 25(12):2349-2353, Vol. 25, Issue 12; ISSN 0884--2914
• Country of Publication: United States
• Language: English

Related Subjects

Silicon carbide
Irradiation effects
Amorphization
Computer simulations
Environmental Molecular Sciences Laboratory