Inverse and oscillatory magnetoresistance in Fe(001)/MgO/Cr/Fe magnetic tunnel junctions
Abstract
The effect of Cr(001) insertion layers in Fe(001)/MgO/Cr/Fe magnetic tunneling junctions (MTJs) is studied from first-principles. It is shown that with the increase of the Cr(001) layer thickness, the tunneling magnetoresistance (TMR) first decreases rapidly and then oscillates with a two-monolayer period. At some thicknesses, the oscillation leads to a sign reversal of the TMR. The oscillatory interfacial Cr moment at the Cr-MgO interface as a function of the Cr layer thickness, which arises from the layer-anti-ferromagnetic ordering of Cr, is the cause for the oscillatory TMR.
- Authors:
-
- Institute of Physics, Chinese Academy of Science
- ORNL
- Publication Date:
- Research Org.:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 1001722
- DOE Contract Number:
- DE-AC05-00OR22725
- Resource Type:
- Journal Article
- Journal Name:
- Physical Review B
- Additional Journal Information:
- Journal Volume: 82; Journal Issue: 13; Journal ID: ISSN 1098--0121
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; MAGNETORESISTANCE; OSCILLATIONS; THICKNESS; TUNNELING
Citation Formats
Zhang, J., Wang, Y., Zhang, Xiaoguang, and Han, Prof. X. F. Inverse and oscillatory magnetoresistance in Fe(001)/MgO/Cr/Fe magnetic tunnel junctions. United States: N. p., 2010.
Web. doi:10.1103/PhysRevB.82.134449.
Zhang, J., Wang, Y., Zhang, Xiaoguang, & Han, Prof. X. F. Inverse and oscillatory magnetoresistance in Fe(001)/MgO/Cr/Fe magnetic tunnel junctions. United States. https://doi.org/10.1103/PhysRevB.82.134449
Zhang, J., Wang, Y., Zhang, Xiaoguang, and Han, Prof. X. F. 2010.
"Inverse and oscillatory magnetoresistance in Fe(001)/MgO/Cr/Fe magnetic tunnel junctions". United States. https://doi.org/10.1103/PhysRevB.82.134449.
@article{osti_1001722,
title = {Inverse and oscillatory magnetoresistance in Fe(001)/MgO/Cr/Fe magnetic tunnel junctions},
author = {Zhang, J. and Wang, Y. and Zhang, Xiaoguang and Han, Prof. X. F.},
abstractNote = {The effect of Cr(001) insertion layers in Fe(001)/MgO/Cr/Fe magnetic tunneling junctions (MTJs) is studied from first-principles. It is shown that with the increase of the Cr(001) layer thickness, the tunneling magnetoresistance (TMR) first decreases rapidly and then oscillates with a two-monolayer period. At some thicknesses, the oscillation leads to a sign reversal of the TMR. The oscillatory interfacial Cr moment at the Cr-MgO interface as a function of the Cr layer thickness, which arises from the layer-anti-ferromagnetic ordering of Cr, is the cause for the oscillatory TMR.},
doi = {10.1103/PhysRevB.82.134449},
url = {https://www.osti.gov/biblio/1001722},
journal = {Physical Review B},
issn = {1098--0121},
number = 13,
volume = 82,
place = {United States},
year = {Fri Jan 01 00:00:00 EST 2010},
month = {Fri Jan 01 00:00:00 EST 2010}
}
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