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Title: Interplay between atomic disorder, lattice swelling and defect energy in ion-irradiation-induced amorphization of SiC

Abstract

We present a combination of experimental and computational evaluations of disorder level and lattice swelling in ion-irradiated materials. Information obtained from X-ray diffraction experiments is compared to X-ray diffraction data generated using atomic-scale simulations. The proposed methodology, which can be applied to a wide range of crystalline materials, is used to study the amorphization process in irradiated SiC. Results show that this process can be divided into two steps. In the first step, point defects and small defect clusters are produced and generate both large lattice swelling and high elastic energy. In the second step, enhanced coalescence of defects and defect clusters occurs to limit this increase in energy, which rapidly leads to complete amorphization.

Authors:
 [1];  [2];  [3];  [4];  [5]
+ Show Author Affiliations
  1. Univ. of Paris-Sud, Orsay (France). Centre for Nuclear Science and Matter Sciences (CSNSM)
  2. Centre National de la Recherche Scientifique (CNRS), Limoges (France). Science des Proc'ed'es C'eramiques et Traitements de Surface (SPCTS)
  3. Commissariat a l'Energie Atomique et aux Energies Alternatives (CEA-DEN-DPC-SCCME), Gif-sur-Yvette (France)
  4. Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Nuclear Engineering and Radiological Sciences
  5. Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division
Publication Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1286809
Alternate Identifier(s):
OSTI ID: 1180042
Grant/Contract Number:  
AC05-00OR22725; AC02-05CH11231; DEAC02-05CH11231
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review. B, Condensed Matter and Materials Physics
Additional Journal Information:
Journal Volume: 90; Journal Issue: 17; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEAR CHEMISTRY; Silicon carbide; radiation damage; x-ray diffraction; molecular dynamics

Citation Formats

Debelle, Aurelien, Boulle, Alexandre, Chartier, Alain, Gao, Fei, and Weber, William J. Interplay between atomic disorder, lattice swelling and defect energy in ion-irradiation-induced amorphization of SiC. United States: N. p., 2014. Web. doi:10.1103/PhysRevB.90.174112.
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Debelle, Aurelien, Boulle, Alexandre, Chartier, Alain, Gao, Fei, & Weber, William J. Interplay between atomic disorder, lattice swelling and defect energy in ion-irradiation-induced amorphization of SiC. United States. https://doi.org/10.1103/PhysRevB.90.174112
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Debelle, Aurelien, Boulle, Alexandre, Chartier, Alain, Gao, Fei, and Weber, William J. Tue . "Interplay between atomic disorder, lattice swelling and defect energy in ion-irradiation-induced amorphization of SiC". United States. https://doi.org/10.1103/PhysRevB.90.174112. https://www.osti.gov/servlets/purl/1286809.
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@article{osti_1286809,
title = {Interplay between atomic disorder, lattice swelling and defect energy in ion-irradiation-induced amorphization of SiC},
author = {Debelle, Aurelien and Boulle, Alexandre and Chartier, Alain and Gao, Fei and Weber, William J},
abstractNote = {We present a combination of experimental and computational evaluations of disorder level and lattice swelling in ion-irradiated materials. Information obtained from X-ray diffraction experiments is compared to X-ray diffraction data generated using atomic-scale simulations. The proposed methodology, which can be applied to a wide range of crystalline materials, is used to study the amorphization process in irradiated SiC. Results show that this process can be divided into two steps. In the first step, point defects and small defect clusters are produced and generate both large lattice swelling and high elastic energy. In the second step, enhanced coalescence of defects and defect clusters occurs to limit this increase in energy, which rapidly leads to complete amorphization.},
doi = {10.1103/PhysRevB.90.174112},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
number = 17,
volume = 90,
place = {United States},
year = {Tue Nov 25 00:00:00 EST 2014},
month = {Tue Nov 25 00:00:00 EST 2014}
}
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Journal Article:
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Publisher's Version of Record
https://doi.org/10.1103/PhysRevB.90.174112
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Works referenced in this record:

Displacement Damage in Irradiated Metals and Semiconductors
book, January 1998

Strain-profile determination in ion-implanted single crystals using generalized simulated annealing
journal, September 2010

Location of fission products in zirconia single crystals
journal, July 1999

Understanding resistance to amorphization by radiation damage
journal, November 2004

Measurement of the Elastic Constants of a Columnar SiC Thin Film
journal, February 2008

Amorphization of silicon carbide by carbon displacement
journal, May 2004

  • Devanathan, R.; Gao, F.; Weber, W. J.
  • Applied Physics Letters, Vol. 84, Issue 19
  • DOI: 10.1063/1.1739515

Molecular Dynamic Simulation of Disorder Induced Amorphization in Pyrochlore
journal, January 2005

Phenomenological analysis of heterogeneous strain fields in epitaxial thin films using x-ray scattering
journal, October 2005

Atomic scale simulation of defect production in irradiated 3C-SiC
journal, September 2001

  • Devanathan, R.; Weber, W. J.; Gao, F.
  • Journal of Applied Physics, Vol. 90, Issue 5
  • DOI: 10.1063/1.1389523

Influence of elastic properties on the strain induced by ion irradiation in crystalline materials
journal, December 2012

Models and mechanisms of irradiation-induced amorphization in ceramics
journal, May 2000

  • Weber, W. J.
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 166-167
  • DOI: 10.1016/S0168-583X(99)00643-6

Radiation effects in SiC for nuclear structural applications
journal, June 2012

  • Katoh, Yutai; Snead, Lance L.; Szlufarska, Izabela
  • Current Opinion in Solid State and Materials Science, Vol. 16, Issue 3
  • DOI: 10.1016/j.cossms.2012.03.005

Damage accumulation in nitrogen implanted 6H‐SiC: Dependence on the direction of ion incidence and on the ion fluence
journal, January 2007

  • Zolnai, Z.; Ster, A.; Khánh, N. Q.
  • Journal of Applied Physics, Vol. 101, Issue 2
  • DOI: 10.1063/1.2409609

Atomistic simulation of amorphization thermokinetics in lanthanum pyrozirconate
journal, January 2006

  • Crocombette, Jean-Paul; Chartier, Alain; Weber, William J.
  • Applied Physics Letters, Vol. 88, Issue 5
  • DOI: 10.1063/1.2171651

Investigation of radiation damage by X-ray diffraction
journal, October 1994

Characterization and modelling of the ion-irradiation induced disorder in 6H-SiC and 3C-SiC single crystals
journal, October 2010

Atomistic modeling of displacement cascades in La 2 Zr 2 O 7 pyrochlore
journal, May 2003

Ion implantation: A useful tool for semiconductor research
journal, July 1974

Temperature dependence of disorder accumulation and amorphization in Au-ion-irradiated 6 H − Si C
journal, October 2004

Atomic displacement processes in irradiated metals
journal, October 1994

Amorphization Driven by Defect-Induced Mechanical Instability
journal, October 2013

Role of Antisite Disorder on Preamorphization Swelling in Titanate Pyrochlores
journal, May 2012

Status of Silicon Carbide Micromachining, Circuits and Sensing Devices
journal, September 2011

Ion-beam induced damage and annealing behaviour in SiC
journal, May 1998

  • Wendler, E.; Heft, A.; Wesch, W.
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 141, Issue 1-4
  • DOI: 10.1016/S0168-583X(98)00083-4

Atomic-scale simulation of 50 keV Si displacement cascades in β-SiC
journal, December 2000

Irradiation damage in Gd 2 Ti 2 O 7 single crystals: Ballistic versus ionization processes
journal, August 2011

Atomic-scale simulations of cascade overlap and damage evolution in silicon carbide
journal, August 2003

XRD investigation of the strain/stress state of ion-irradiated crystals
journal, May 2010

  • Debelle, Aurélien; Declémy, Alain
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 268, Issue 9
  • DOI: 10.1016/j.nimb.2010.01.009

Computer simulation of disordering and amorphization by Si and Au recoils in 3C–SiC
journal, April 2001

  • Gao, F.; Weber, W. J.
  • Journal of Applied Physics, Vol. 89, Issue 8
  • DOI: 10.1063/1.1355717

Calculated elastic constants and deformation potentials of cubic SiC
journal, August 1991

Finding possible transition states of defects in silicon-carbide and alpha-iron using the dimer method
journal, April 2003

  • Gao, Fei; Henkelman, Graeme; Weber, William J.
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 202
  • DOI: 10.1016/S0168-583X(02)01822-0

Diffuse x-ray streaks from stacking faults in Si analyzed by atomistic simulations
journal, February 2000

  • Nordlund, K.; Beck, U.; Metzger, T. H.
  • Applied Physics Letters, Vol. 76, Issue 7
  • DOI: 10.1063/1.125604

Swift heavy ion induced recrystallization in cubic silicon carbide: New insights from designed experiments and MD simulations
journal, May 2014

  • Debelle, A.; Backman, M.; Thomé, L.
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 326
  • DOI: 10.1016/j.nimb.2013.10.080

Mechanical properties and elastic constants due to damage accumulation and amorphization in SiC
journal, June 2004

Ion-irradiation-induced amorphization of La 2 Zr 2 O 7 pyrochlore
journal, August 2002

Residual stress gradients along ion implanted zones ? cubic crystals
journal, June 1990

  • Rao, Satish I.; Houska, C. R.
  • Journal of Materials Science, Vol. 25, Issue 6
  • DOI: 10.1007/BF00584887

Ab initio molecular dynamics calculations of threshold displacement energies in silicon carbide
journal, October 2005

Raman spectroscopy study of heavy-ion-irradiated α-SiC
journal, May 2006

Irradiation-induced defect clustering and amorphization in silicon carbide
journal, December 2010

  • Weber, William J.; Gao, Fei
  • Journal of Materials Research, Vol. 25, Issue 12
  • DOI: 10.1557/jmr.2010.0292
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    Works referencing / citing this record:

    Comparative study of radiation defect dynamics in 3C-SiC by X-ray diffraction, Raman scattering, and ion channeling
    journal, December 2018

    Localized Helium Implantation in SiCf/SiCm Composites Comparing Fiber and Matrix Swelling
    journal, October 2019

    Strain engineering 4H-SiC with ion beams
    journal, June 2019

    • Zhang, F. X.; Tong, Y.; Xue, Haizhou
    • Applied Physics Letters, Vol. 114, Issue 22
    • DOI: 10.1063/1.5109226
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