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Title: Domain Wall Motion Across Various Grain Boundaries in Ferroelectric Thin Films

Abstract

Domain wall movement at and near engineered 10°, 15°, and 24° tilt and 10° and 30° twist grain boundaries was measured by band excitation piezoresponse force microscopy for Pb(Zr,Ti)O3 films with Zr/Ti ratio of 45/55 and 52/48. A minimum in nonlinear response was observed at the grain boundary for the highest angle twist and tilt grain boundaries, while a maximum in nonlinear response was observed at the 10° tilt grain boundaries. Lastly, the observed nonlinear response was correlated to the domain structure imaged in cross section by transmission electron microscopy.

Authors:
 [1];  [2];  [3];  [3]; ORCiD logo [3];  [3];  [2];  [2];  [1];  [1]
  1. Pennsylvania State Univ., University Park, PA (United States). Department of Materials Science and Engineering and Materials Research Inst.
  2. Univ. of Sheffield (United Kingdom). Dept. of Materials Science and Engineering
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Org.:
National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1286790
Grant/Contract Number:  
AC05-00OR22725; DMR-1005771; CNMS2011-022; CNMS2011-223; CNMS2013-127; EP/I038934/1
Resource Type:
Accepted Manuscript
Journal Name:
Journal of the American Ceramic Society
Additional Journal Information:
Journal Volume: 98; Journal Issue: 6; Journal ID: ISSN 0002-7820
Publisher:
American Ceramic Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Marincel, Daniel M., Zhang, Huairuo, Jesse, Stephen, Belianinov, Alex, Okatan, Mahmut B., Kalinin, Sergei V., Rainforth, W. Mark, Reaney, Ian M., Randall, Clive A., and Trolier-McKinstry, Susan. Domain Wall Motion Across Various Grain Boundaries in Ferroelectric Thin Films. United States: N. p., 2015. Web. doi:10.1111/jace.13535.
Marincel, Daniel M., Zhang, Huairuo, Jesse, Stephen, Belianinov, Alex, Okatan, Mahmut B., Kalinin, Sergei V., Rainforth, W. Mark, Reaney, Ian M., Randall, Clive A., & Trolier-McKinstry, Susan. Domain Wall Motion Across Various Grain Boundaries in Ferroelectric Thin Films. United States. https://doi.org/10.1111/jace.13535
Marincel, Daniel M., Zhang, Huairuo, Jesse, Stephen, Belianinov, Alex, Okatan, Mahmut B., Kalinin, Sergei V., Rainforth, W. Mark, Reaney, Ian M., Randall, Clive A., and Trolier-McKinstry, Susan. Sat . "Domain Wall Motion Across Various Grain Boundaries in Ferroelectric Thin Films". United States. https://doi.org/10.1111/jace.13535. https://www.osti.gov/servlets/purl/1286790.
@article{osti_1286790,
title = {Domain Wall Motion Across Various Grain Boundaries in Ferroelectric Thin Films},
author = {Marincel, Daniel M. and Zhang, Huairuo and Jesse, Stephen and Belianinov, Alex and Okatan, Mahmut B. and Kalinin, Sergei V. and Rainforth, W. Mark and Reaney, Ian M. and Randall, Clive A. and Trolier-McKinstry, Susan},
abstractNote = {Domain wall movement at and near engineered 10°, 15°, and 24° tilt and 10° and 30° twist grain boundaries was measured by band excitation piezoresponse force microscopy for Pb(Zr,Ti)O3 films with Zr/Ti ratio of 45/55 and 52/48. A minimum in nonlinear response was observed at the grain boundary for the highest angle twist and tilt grain boundaries, while a maximum in nonlinear response was observed at the 10° tilt grain boundaries. Lastly, the observed nonlinear response was correlated to the domain structure imaged in cross section by transmission electron microscopy.},
doi = {10.1111/jace.13535},
journal = {Journal of the American Ceramic Society},
number = 6,
volume = 98,
place = {United States},
year = {Sat Mar 21 00:00:00 EDT 2015},
month = {Sat Mar 21 00:00:00 EDT 2015}
}

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Cited by: 28 works
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Works referencing / citing this record:

Achieving ultrahigh energy storage performance in bismuth magnesium titanate film capacitors via amorphous-structure engineering
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