Reversible conversion of dominant polarity in ambipolar polymer/graphene oxide hybrids
Abstract
The possibility to selectively modulate the charge carrier transport in semiconducting materials is extremely challenging for the development of high performance and low-power consuming logic circuits. Systematical control over the polarity (electrons and holes) in transistor based on solution processed layer by layer polymer/graphene oxide hybrid system has been demonstrated. The conversion degree of the polarity is well controlled and reversible by trapping the opposite carriers. Basically, an electron device is switched to be a hole only device or vice versa. Finally, a hybrid layer ambipolar inverter is demonstrated in which almost no leakage of opposite carrier is found. This hybrid material has wide range of applications in planar p-n junctions and logic circuits for high-throughput manufacturing of printed electronic circuits.
- Authors:
-
- City Univ. of Hong Kong, Hong Kong (China)
- Queensland Univ. of Technology, Brisbane (Australia)
- The Hong Kong Polytechnic Univ., Hong Kong (China)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- City Univ. of Hong Kong, Hong Kong (China); City Univ. of Hong Kong, Shenzhen (China)
- Publication Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1259695
- Alternate Identifier(s):
- OSTI ID: 1286902
- Grant/Contract Number:
- 7004012; AC05-00OR22725
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Scientific Reports
- Additional Journal Information:
- Journal Volume: 5; Journal ID: ISSN 2045-2322
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; electronic devices; electronic properties and materials
Citation Formats
Zhou, Ye, Han, Su -Ting, Sonar, Prashant, Ma, Xinlei, Chen, Jihua, Zheng, Zijian, and Roy, V. A. L. Reversible conversion of dominant polarity in ambipolar polymer/graphene oxide hybrids. United States: N. p., 2015.
Web. doi:10.1038/srep09446.
Zhou, Ye, Han, Su -Ting, Sonar, Prashant, Ma, Xinlei, Chen, Jihua, Zheng, Zijian, & Roy, V. A. L. Reversible conversion of dominant polarity in ambipolar polymer/graphene oxide hybrids. United States. https://doi.org/10.1038/srep09446
Zhou, Ye, Han, Su -Ting, Sonar, Prashant, Ma, Xinlei, Chen, Jihua, Zheng, Zijian, and Roy, V. A. L. Tue .
"Reversible conversion of dominant polarity in ambipolar polymer/graphene oxide hybrids". United States. https://doi.org/10.1038/srep09446. https://www.osti.gov/servlets/purl/1259695.
@article{osti_1259695,
title = {Reversible conversion of dominant polarity in ambipolar polymer/graphene oxide hybrids},
author = {Zhou, Ye and Han, Su -Ting and Sonar, Prashant and Ma, Xinlei and Chen, Jihua and Zheng, Zijian and Roy, V. A. L.},
abstractNote = {The possibility to selectively modulate the charge carrier transport in semiconducting materials is extremely challenging for the development of high performance and low-power consuming logic circuits. Systematical control over the polarity (electrons and holes) in transistor based on solution processed layer by layer polymer/graphene oxide hybrid system has been demonstrated. The conversion degree of the polarity is well controlled and reversible by trapping the opposite carriers. Basically, an electron device is switched to be a hole only device or vice versa. Finally, a hybrid layer ambipolar inverter is demonstrated in which almost no leakage of opposite carrier is found. This hybrid material has wide range of applications in planar p-n junctions and logic circuits for high-throughput manufacturing of printed electronic circuits.},
doi = {10.1038/srep09446},
journal = {Scientific Reports},
number = ,
volume = 5,
place = {United States},
year = {Tue Mar 24 00:00:00 EDT 2015},
month = {Tue Mar 24 00:00:00 EDT 2015}
}
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Outlook and Emerging Semiconducting Materials for Ambipolar Transistors
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Programmable nanowire circuits for nanoprocessors
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CMOS-based carbon nanotube pass-transistor logic integrated circuits
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Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices
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Highly stable organic polymer field-effect transistor sensor for selective detection in the marine environment
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Fully-printed high-performance organic thin-film transistors and circuitry on one-micron-thick polymer films
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Organic light-emitting transistors with an efficiency that outperforms the equivalent light-emitting diodes
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- Capelli, Raffaella; Toffanin, Stefano; Generali, Gianluca
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Synthesis of monolithic graphene–graphite integrated electronics
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Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters
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Solution-processed ambipolar organic field-effect transistors and inverters
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- Meijer, E. J.; de Leeuw, D. M.; Setayesh, S.
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Large-area ultrathin films of reduced graphene oxide as a transparent and flexible electronic material
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Ambipolar field effect in the ternary topological insulator (BixSb1–x)2Te3 by composition tuning
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Detecting the translocation of DNA through a nanopore using graphene nanoribbons
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A furan-containing conjugated polymer for high mobility ambipolar organic thin film transistors
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- Chemical Communications, Vol. 48, Issue 67
Quasi-intrinsic semiconducting state of titanyl-phthalocyanine films obtained under ultrahigh vacuum conditions
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Complementary organic field effect transistors by ultraviolet dielectric interface modification
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Unipolarization of ambipolar organic field effect transistors toward high-impedance complementary metal-oxide-semiconductor circuits
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Organic Heterostructure Field-Effect Transistors
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