Large-Area Growth of Turbostratic Graphene on Ni(111) via Physical Vapor Deposition
Abstract
Single-layer graphene has demonstrated remarkable electronic properties that are strongly influenced by interfacial bonding and break down for the lowest energy configuration of stacked graphene layers (AB Bernal). Multilayer graphene with relative rotations between carbon layers, known as turbostratic graphene, can effectively decouple the electronic states of adjacent layers, preserving properties similar to that of SLG. While the growth of AB Bernal graphene through chemical vapor deposition has been widely reported, we investigate the growth of turbostratic graphene on heteroepitaxial Ni(111) thin films utilizing physical vapor deposition. By varying the carbon deposition temperature between 800 –1100 °C, we report an increase in the graphene quality concomitant with a transition in the size of uniform thickness graphene, ranging from nanocrystallites to thousands of square microns. Combination Raman modes of as-grown graphene within the frequency range of 1650 cm-1 to 2300 cm-1, along with features of the Raman 2D mode, were employed as signatures of turbostratic graphene. Bilayer and multilayer graphene were directly identified from areas that exhibited Raman characteristics of turbostratic graphene using high-resolution TEM imaging. In conclusion, Raman maps of the pertinent modes reveal large regions of turbostratic graphene on Ni(111) thin films at a deposition temperature of 1100 °C.
- Authors:
-
- Brookhaven National Lab. (BNL), Upton, NY (United States); Stony Brook Univ., NY (United States)
- Boston Univ., MA (United States)
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Publication Date:
- Research Org.:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1259265
- Alternate Identifier(s):
- OSTI ID: 1335423
- Report Number(s):
- BNL-112043-2016-JA
Journal ID: ISSN 2045-2322; srep19804
- Grant/Contract Number:
- AC02-98CH10886; SC0012704; SC00112704
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Scientific Reports
- Additional Journal Information:
- Journal Volume: 6; Journal ID: ISSN 2045-2322
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Electronic properties and materials; Synthesis of graphene
Citation Formats
Garlow, Joseph A., Barrett, Lawrence K., Wu, Lijun, Kisslinger, Kim, Zhu, Yimei, and Pulecio, Javier F. Large-Area Growth of Turbostratic Graphene on Ni(111) via Physical Vapor Deposition. United States: N. p., 2016.
Web. doi:10.1038/srep19804.
Garlow, Joseph A., Barrett, Lawrence K., Wu, Lijun, Kisslinger, Kim, Zhu, Yimei, & Pulecio, Javier F. Large-Area Growth of Turbostratic Graphene on Ni(111) via Physical Vapor Deposition. United States. https://doi.org/10.1038/srep19804
Garlow, Joseph A., Barrett, Lawrence K., Wu, Lijun, Kisslinger, Kim, Zhu, Yimei, and Pulecio, Javier F. Fri .
"Large-Area Growth of Turbostratic Graphene on Ni(111) via Physical Vapor Deposition". United States. https://doi.org/10.1038/srep19804. https://www.osti.gov/servlets/purl/1259265.
@article{osti_1259265,
title = {Large-Area Growth of Turbostratic Graphene on Ni(111) via Physical Vapor Deposition},
author = {Garlow, Joseph A. and Barrett, Lawrence K. and Wu, Lijun and Kisslinger, Kim and Zhu, Yimei and Pulecio, Javier F.},
abstractNote = {Single-layer graphene has demonstrated remarkable electronic properties that are strongly influenced by interfacial bonding and break down for the lowest energy configuration of stacked graphene layers (AB Bernal). Multilayer graphene with relative rotations between carbon layers, known as turbostratic graphene, can effectively decouple the electronic states of adjacent layers, preserving properties similar to that of SLG. While the growth of AB Bernal graphene through chemical vapor deposition has been widely reported, we investigate the growth of turbostratic graphene on heteroepitaxial Ni(111) thin films utilizing physical vapor deposition. By varying the carbon deposition temperature between 800 –1100 °C, we report an increase in the graphene quality concomitant with a transition in the size of uniform thickness graphene, ranging from nanocrystallites to thousands of square microns. Combination Raman modes of as-grown graphene within the frequency range of 1650 cm-1 to 2300 cm-1, along with features of the Raman 2D mode, were employed as signatures of turbostratic graphene. Bilayer and multilayer graphene were directly identified from areas that exhibited Raman characteristics of turbostratic graphene using high-resolution TEM imaging. In conclusion, Raman maps of the pertinent modes reveal large regions of turbostratic graphene on Ni(111) thin films at a deposition temperature of 1100 °C.},
doi = {10.1038/srep19804},
journal = {Scientific Reports},
number = ,
volume = 6,
place = {United States},
year = {Fri Jan 29 00:00:00 EST 2016},
month = {Fri Jan 29 00:00:00 EST 2016}
}
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