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Title: Electric field induced reversible 180° magnetization switching through tuning of interfacial exchange bias along magnetic easy-axis in multiferroic laminates

Abstract

E-field control of interfacial exchange coupling and deterministic switching of magnetization have been demonstrated in two sets of ferromagnetic(FM)/antiferromagnetic(AFM)/ferroelectric(FE) multiferroic heterostructures, including NiFe/NiCoO/glass/PZN-PT (011) and NiFe/FeMn/glass/PZN-PT (011). We designed this experiment to achieve exchange bias tuning along the magnetic easy axis, which is critical for realizing reversible 180° magnetization deterministic switching at zero or small magnetic bias. Strong exchange coupling were established across AFM-FM interfaces, which plays an important role in voltage control of magnetization switching. Through the competition between the E-field induced uniaxial anisotropy in ferromagnetic layer and unidirectional anisotropy in antiferromagnetic layer, the exchange bias was significantly shifted by up to |ΔHex|/Hex=8% in NiFe/FeMn/glass/PZN-PT (011) and 13% in NiFe/NiCoO/glass/PZN-PT (011). In addition, the square shape of the hysteresis loop, as well as a strong shape tunability of |ΔHex|/Hc=67.5~125% in NiFe/FeMn/glass/PZN-PT and 30~38% in NiFe/NiCoO/glass/PZN-PT were achieved, which lead to a near 180° magnetization switching. Lastly, electrical tuning of interfacial exchange coupling in FM/AFM/FE systems paves a new way for realizing magnetoelectric random access memories and other memory technologies.

Authors:
 [1];  [2];  [1];  [1];  [1];  [1];  [3];  [4];  [5];  [6];  [1]
+ Show Author Affiliations
  1. Xi'an Jiaotong Univ., Xi'an (China)
  2. Argonne National Lab. (ANL), Lemont, IL (United States). Energy Systems Division
  3. Beijing Education Examinations Authority, Beijing (China)
  4. Beijing Inst. of Technology, Beijing (China)
  5. Northeastern Univ., Boston, MA (United States)
  6. Xi'an Jiaotong Univ., Xi'an (China); Northeastern Univ., Boston, MA (United States)
Publication Date:
Research Org.:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1258605
Resource Type:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 5; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Xue, Xu, Zhou, Ziyao, Peng, Bin, Zhu, Mingmin, Zhang, Yijun, Ren, Wei, Ren, Tao, Yang, Xi, Nan, Tianxiang, Sun, Nian X., and Liu, Ming. Electric field induced reversible 180° magnetization switching through tuning of interfacial exchange bias along magnetic easy-axis in multiferroic laminates. United States: N. p., 2015. Web. doi:10.1038/srep16480.
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Xue, Xu, Zhou, Ziyao, Peng, Bin, Zhu, Mingmin, Zhang, Yijun, Ren, Wei, Ren, Tao, Yang, Xi, Nan, Tianxiang, Sun, Nian X., & Liu, Ming. Electric field induced reversible 180° magnetization switching through tuning of interfacial exchange bias along magnetic easy-axis in multiferroic laminates. United States. https://doi.org/10.1038/srep16480
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Xue, Xu, Zhou, Ziyao, Peng, Bin, Zhu, Mingmin, Zhang, Yijun, Ren, Wei, Ren, Tao, Yang, Xi, Nan, Tianxiang, Sun, Nian X., and Liu, Ming. Wed . "Electric field induced reversible 180° magnetization switching through tuning of interfacial exchange bias along magnetic easy-axis in multiferroic laminates". United States. https://doi.org/10.1038/srep16480. https://www.osti.gov/servlets/purl/1258605.
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@article{osti_1258605,
title = {Electric field induced reversible 180° magnetization switching through tuning of interfacial exchange bias along magnetic easy-axis in multiferroic laminates},
author = {Xue, Xu and Zhou, Ziyao and Peng, Bin and Zhu, Mingmin and Zhang, Yijun and Ren, Wei and Ren, Tao and Yang, Xi and Nan, Tianxiang and Sun, Nian X. and Liu, Ming},
abstractNote = {E-field control of interfacial exchange coupling and deterministic switching of magnetization have been demonstrated in two sets of ferromagnetic(FM)/antiferromagnetic(AFM)/ferroelectric(FE) multiferroic heterostructures, including NiFe/NiCoO/glass/PZN-PT (011) and NiFe/FeMn/glass/PZN-PT (011). We designed this experiment to achieve exchange bias tuning along the magnetic easy axis, which is critical for realizing reversible 180° magnetization deterministic switching at zero or small magnetic bias. Strong exchange coupling were established across AFM-FM interfaces, which plays an important role in voltage control of magnetization switching. Through the competition between the E-field induced uniaxial anisotropy in ferromagnetic layer and unidirectional anisotropy in antiferromagnetic layer, the exchange bias was significantly shifted by up to |ΔHex|/Hex=8% in NiFe/FeMn/glass/PZN-PT (011) and 13% in NiFe/NiCoO/glass/PZN-PT (011). In addition, the square shape of the hysteresis loop, as well as a strong shape tunability of |ΔHex|/Hc=67.5~125% in NiFe/FeMn/glass/PZN-PT and 30~38% in NiFe/NiCoO/glass/PZN-PT were achieved, which lead to a near 180° magnetization switching. Lastly, electrical tuning of interfacial exchange coupling in FM/AFM/FE systems paves a new way for realizing magnetoelectric random access memories and other memory technologies.},
doi = {10.1038/srep16480},
journal = {Scientific Reports},
number = ,
volume = 5,
place = {United States},
year = {Wed Nov 18 00:00:00 EST 2015},
month = {Wed Nov 18 00:00:00 EST 2015}
}
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https://doi.org/10.1038/srep16480
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    Works referencing / citing this record:

    Ferroelectric strain modulation of antiferromagnetic moments in Ni/NiO ferromagnet/antiferromagnet heterostructures
    journal, May 2017

    Strain-mediated magnetoelectric storage, transmission, and processing: Putting the squeeze on data
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