Electron-Selective TiO2 Contact for Cu(In,Ga)Se2 Solar Cells
Abstract
The non-toxic and wide bandgap material TiO 2 is explored as an n-type buffer layer on p-type Cu(In,Ga)Se 2 (CIGS) absorber layer for thin film solar cells. The amorphous TiO 2 thin film deposited by atomic layer deposition process at low temperatures shows conformal coverage on the CIGS absorber layer. Solar cells from non-vacuum deposited CIGS absorbers with TiO 2 buffer layer result in a high short-circuit current density of 38.9 mA/cm 2 as compared to 36.9 mA/cm 2 measured in the reference cell with CdS buffer layer, without compromising open-circuit voltage. The significant photocurrent gain, mainly in the UV part of the spectrum, can be attributed to the low parasitic absorption loss in the ultrathin TiO2 layer (~10 nm) with a larger bandgap of 3.4 eV compared to 2.4 eV of the traditionally used CdS. Overall the solar cell conversion efficiency was improved from 9.5% to 9.9% by substituting the CdS by TiO2 on an active cell area of 10.5 mm 2. Optimized TiO2 /CIGS solar cells show excellent long-term stability. The results imply that TiO2 is a promising buffer layer material for CIGS solar cells, avoiding the toxic CdS buffer layer with added performance advantage.
- Authors:
-
- Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division; Industrial Technology Research Institute, Hsinchu (Taiwan). Green Energy & Environment Research Laboratorie
- Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division
- Industrial Technology Research Institute, Hsinchu (Taiwan). Green Energy & Environment Research Laboratorie
- Univ. of California, Berkeley, CA (United States)
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1256061
- Alternate Identifier(s):
- OSTI ID: 1378631
- Grant/Contract Number:
- AC02-05CH11231
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Scientific Reports
- Additional Journal Information:
- Journal Volume: 5; Journal ID: ISSN 2045-2322
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY
Citation Formats
Hsu, Weitse, Sutter-Fella, Carolin M., Hettick, Mark, Cheng, Lungteng, Chan, Shengwen, Chen, Yunfeng, Zeng, Yuping, Zheng, Maxwell, Wang, Hsin-Ping, Chiang, Chien-Chih, and Javey, Ali. Electron-Selective TiO2 Contact for Cu(In,Ga)Se2 Solar Cells. United States: N. p., 2015.
Web. doi:10.1038/srep16028.
Hsu, Weitse, Sutter-Fella, Carolin M., Hettick, Mark, Cheng, Lungteng, Chan, Shengwen, Chen, Yunfeng, Zeng, Yuping, Zheng, Maxwell, Wang, Hsin-Ping, Chiang, Chien-Chih, & Javey, Ali. Electron-Selective TiO2 Contact for Cu(In,Ga)Se2 Solar Cells. United States. https://doi.org/10.1038/srep16028
Hsu, Weitse, Sutter-Fella, Carolin M., Hettick, Mark, Cheng, Lungteng, Chan, Shengwen, Chen, Yunfeng, Zeng, Yuping, Zheng, Maxwell, Wang, Hsin-Ping, Chiang, Chien-Chih, and Javey, Ali. Tue .
"Electron-Selective TiO2 Contact for Cu(In,Ga)Se2 Solar Cells". United States. https://doi.org/10.1038/srep16028. https://www.osti.gov/servlets/purl/1256061.
@article{osti_1256061,
title = {Electron-Selective TiO2 Contact for Cu(In,Ga)Se2 Solar Cells},
author = {Hsu, Weitse and Sutter-Fella, Carolin M. and Hettick, Mark and Cheng, Lungteng and Chan, Shengwen and Chen, Yunfeng and Zeng, Yuping and Zheng, Maxwell and Wang, Hsin-Ping and Chiang, Chien-Chih and Javey, Ali},
abstractNote = {The non-toxic and wide bandgap material TiO 2 is explored as an n-type buffer layer on p-type Cu(In,Ga)Se 2 (CIGS) absorber layer for thin film solar cells. The amorphous TiO 2 thin film deposited by atomic layer deposition process at low temperatures shows conformal coverage on the CIGS absorber layer. Solar cells from non-vacuum deposited CIGS absorbers with TiO 2 buffer layer result in a high short-circuit current density of 38.9 mA/cm 2 as compared to 36.9 mA/cm 2 measured in the reference cell with CdS buffer layer, without compromising open-circuit voltage. The significant photocurrent gain, mainly in the UV part of the spectrum, can be attributed to the low parasitic absorption loss in the ultrathin TiO2 layer (~10 nm) with a larger bandgap of 3.4 eV compared to 2.4 eV of the traditionally used CdS. Overall the solar cell conversion efficiency was improved from 9.5% to 9.9% by substituting the CdS by TiO2 on an active cell area of 10.5 mm 2. Optimized TiO2 /CIGS solar cells show excellent long-term stability. The results imply that TiO2 is a promising buffer layer material for CIGS solar cells, avoiding the toxic CdS buffer layer with added performance advantage.},
doi = {10.1038/srep16028},
journal = {Scientific Reports},
number = ,
volume = 5,
place = {United States},
year = {Tue Nov 03 00:00:00 EST 2015},
month = {Tue Nov 03 00:00:00 EST 2015}
}
Web of Science
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