Predicted Growth of Two-Dimensional Topological Insulator Thin Films of III-V Compounds on Si(111) Substrate
Abstract
We have carried out systematic first-principles electronic structure computations of growth of ultrathin films of compounds of group III (B, Al, In, Ga, and Tl) with group V (N, P, As, Sb, and Bi) elements on Si(111) substrate, including effects of hydrogenation. Two bilayers (BLs) of AlBi, InBi, GaBi, TlAs, and TlSb are found to support a topological phase over a wide range of strains, in addition to BBi, TlN, and TlBi which can be driven into the nontrivial phase via strain. A large band gap of 134 meV is identified in hydrogenated 2 BL film of InBi. One and two BL films of GaBi and 2 BL films of InBi and TlAs on Si(111) surface possess nontrivial phases with a band gap as large as 121 meV in the case of 2 BL film of GaBi. Persistence of the nontrivial phase upon hydrogenations in the III-V thin films suggests that these films are suitable for growing on various substrates.
- Authors:
-
- National Sun Yat-Sen Univ., Kaohsiung (Taiwan)
- National Univ. of Singapore (Singapore)
- Northeastern Univ., Boston, MA (United States)
- Publication Date:
- Research Org.:
- Northeastern Univ., Boston, MA (United States); Energy Frontier Research Centers (EFRC) (United States). Center for the Computational Design of Functional Layered Materials (CCDM)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1242039
- Grant/Contract Number:
- FG02-07ER46352
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Scientific Reports
- Additional Journal Information:
- Journal Volume: 5; Journal ID: ISSN 2045-2322
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Yao, Liang-Zi, Crisostomo, Christian P., Yeh, Chun-Chen, Lai, Shu-Ming, Huang, Zhi-Quan, Hsu, Chia-Hsiu, Chuang, Feng-Chuan, Lin, Hsin, and Bansil, Arun. Predicted Growth of Two-Dimensional Topological Insulator Thin Films of III-V Compounds on Si(111) Substrate. United States: N. p., 2015.
Web. doi:10.1038/srep15463.
Yao, Liang-Zi, Crisostomo, Christian P., Yeh, Chun-Chen, Lai, Shu-Ming, Huang, Zhi-Quan, Hsu, Chia-Hsiu, Chuang, Feng-Chuan, Lin, Hsin, & Bansil, Arun. Predicted Growth of Two-Dimensional Topological Insulator Thin Films of III-V Compounds on Si(111) Substrate. United States. https://doi.org/10.1038/srep15463
Yao, Liang-Zi, Crisostomo, Christian P., Yeh, Chun-Chen, Lai, Shu-Ming, Huang, Zhi-Quan, Hsu, Chia-Hsiu, Chuang, Feng-Chuan, Lin, Hsin, and Bansil, Arun. Thu .
"Predicted Growth of Two-Dimensional Topological Insulator Thin Films of III-V Compounds on Si(111) Substrate". United States. https://doi.org/10.1038/srep15463. https://www.osti.gov/servlets/purl/1242039.
@article{osti_1242039,
title = {Predicted Growth of Two-Dimensional Topological Insulator Thin Films of III-V Compounds on Si(111) Substrate},
author = {Yao, Liang-Zi and Crisostomo, Christian P. and Yeh, Chun-Chen and Lai, Shu-Ming and Huang, Zhi-Quan and Hsu, Chia-Hsiu and Chuang, Feng-Chuan and Lin, Hsin and Bansil, Arun},
abstractNote = {We have carried out systematic first-principles electronic structure computations of growth of ultrathin films of compounds of group III (B, Al, In, Ga, and Tl) with group V (N, P, As, Sb, and Bi) elements on Si(111) substrate, including effects of hydrogenation. Two bilayers (BLs) of AlBi, InBi, GaBi, TlAs, and TlSb are found to support a topological phase over a wide range of strains, in addition to BBi, TlN, and TlBi which can be driven into the nontrivial phase via strain. A large band gap of 134 meV is identified in hydrogenated 2 BL film of InBi. One and two BL films of GaBi and 2 BL films of InBi and TlAs on Si(111) surface possess nontrivial phases with a band gap as large as 121 meV in the case of 2 BL film of GaBi. Persistence of the nontrivial phase upon hydrogenations in the III-V thin films suggests that these films are suitable for growing on various substrates.},
doi = {10.1038/srep15463},
journal = {Scientific Reports},
number = ,
volume = 5,
place = {United States},
year = {Thu Nov 05 00:00:00 EST 2015},
month = {Thu Nov 05 00:00:00 EST 2015}
}
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