Electron-induced single event upsets in 28 nm and 45 nm bulk SRAMs

Trippe, J. M.; Reed, R. A.; Austin, R. A.; Sierawski, B. D.; Weller, R. A.; Funkhouser, E. D.; King, M. P.; Narasimham, B.; Bartz, B.; Baumann, R.; Schrimpf, R. D.; Labello, R.; Nichols, J.; Weeden-Wright, S. L.

doi:10.1109/tns.2015.2496967

Title: Electron-induced single event upsets in 28 nm and 45 nm bulk SRAMs

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Abstract

In this study, we present experimental evidence of single electron-induced upsets in commercial 28 nm and 45 nm CMOS SRAMs from a monoenergetic electron beam. Upsets were observed in both technology nodes when the SRAM was operated in a low power state. The experimental cross section depends strongly on both bias and technology node feature size, consistent with previous work in which SRAMs were irradiated with low energy muons and protons. Accompanying simulations demonstrate that δ-rays produced by the primary electrons are responsible for the observed upsets. Additional simulations predict the on-orbit event rates for various Earth and Jovian environments for a set of sensitive volumes representative of current technology nodes. The electron contribution to the total upset rate for Earth environments is significant for critical charges as high as 0.2 fC. This value is comparable to that of sub-22 nm bulk SRAMs. Similarly, for the Jovian environment, the electron-induced upset rate is larger than the proton-induced upset rate for critical charges as high as 0.3 fC.

Authors:

Trippe, J. M. ^[1]; Reed, R. A. ^[1]; Austin, R. A. ^[1]; Sierawski, B. D. ^[1]; Weller, R. A. ^[1]; Funkhouser, E. D. ^[1]; King, M. P. ^[2]; Narasimham, B. ^[3]; Bartz, B. ^[3]; Baumann, R. ^[4]; Schrimpf, R. D. ^[1]; Labello, R. ^[5]; Nichols, J. ^[5]; Weeden-Wright, S. L. ^[1]

Vanderbilt Univ., Nashville, TN (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Broadcom, Irvine, CA (United States)
Texas Instruments, Inc., Dallas, TX (United States)
Arnold Engineering and Development Complex, Tullahoma, TN (United States)

Publication Date:: Tue Dec 01 00:00:00 EST 2015

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA)

OSTI Identifier:: 1237662

Report Number(s):: SAND-2015-5314J
Journal ID: ISSN 0018-9499; 594551

Grant/Contract Number:: AC04-94AL85000

Resource Type:: Accepted Manuscript

Journal Name:: IEEE Transactions on Nuclear Science

Additional Journal Information:: Journal Volume: 62; Journal Issue: 6; Journal ID: ISSN 0018-9499

Publisher:: Institute of Electrical and Electronics Engineers (IEEE)

Country of Publication:: United States

Language:: English

Subject:: 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY

Citation Formats


                    Trippe, J. M., Reed, R. A., Austin, R. A., Sierawski, B. D., Weller, R. A., Funkhouser, E. D., King, M. P., Narasimham, B., Bartz, B., Baumann, R., Schrimpf, R. D., Labello, R., Nichols, J., and Weeden-Wright, S. L. Electron-induced single event upsets in 28 nm and 45 nm bulk SRAMs.  United States: N. p., 2015. 
Web.  doi:10.1109/tns.2015.2496967.

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                    Trippe, J. M., Reed, R. A., Austin, R. A., Sierawski, B. D., Weller, R. A., Funkhouser, E. D., King, M. P., Narasimham, B., Bartz, B., Baumann, R., Schrimpf, R. D., Labello, R., Nichols, J., & Weeden-Wright, S. L. Electron-induced single event upsets in 28 nm and 45 nm bulk SRAMs.  United States.  https://doi.org/10.1109/tns.2015.2496967

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                    Trippe, J. M., Reed, R. A., Austin, R. A., Sierawski, B. D., Weller, R. A., Funkhouser, E. D., King, M. P., Narasimham, B., Bartz, B., Baumann, R., Schrimpf, R. D., Labello, R., Nichols, J., and Weeden-Wright, S. L. Tue .  
"Electron-induced single event upsets in 28 nm and 45 nm bulk SRAMs".  United States.  https://doi.org/10.1109/tns.2015.2496967.  https://www.osti.gov/servlets/purl/1237662.

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@article{osti_1237662,

  title        = {Electron-induced single event upsets in 28 nm and 45 nm bulk SRAMs},

  author       = {Trippe, J. M. and Reed, R. A. and Austin, R. A. and Sierawski, B. D. and Weller, R. A. and Funkhouser, E. D. and King, M. P. and Narasimham, B. and Bartz, B. and Baumann, R. and Schrimpf, R. D. and Labello, R. and Nichols, J. and Weeden-Wright, S. L.},

  abstractNote = {In this study, we present experimental evidence of single electron-induced upsets in commercial 28 nm and 45 nm CMOS SRAMs from a monoenergetic electron beam. Upsets were observed in both technology nodes when the SRAM was operated in a low power state. The experimental cross section depends strongly on both bias and technology node feature size, consistent with previous work in which SRAMs were irradiated with low energy muons and protons. Accompanying simulations demonstrate that δ-rays produced by the primary electrons are responsible for the observed upsets. Additional simulations predict the on-orbit event rates for various Earth and Jovian environments for a set of sensitive volumes representative of current technology nodes. The electron contribution to the total upset rate for Earth environments is significant for critical charges as high as 0.2 fC. This value is comparable to that of sub-22 nm bulk SRAMs. Similarly, for the Jovian environment, the electron-induced upset rate is larger than the proton-induced upset rate for critical charges as high as 0.3 fC.},

  doi          = {10.1109/tns.2015.2496967},

  journal      = {IEEE Transactions on Nuclear Science},

  number       = 6,

  volume       = 62,

  place        = {United States},

  year         = {Tue Dec 01 00:00:00 EST 2015},

  month        = {Tue Dec 01 00:00:00 EST 2015}

}

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