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Title: Electronic and magnetic properties of Si substituted Fe3Ge

Abstract

We studied the effect of Si substitution in the hexagonal Fe3Ge, using first principles calculations. We also find the low temperature magnetic anisotropy in this system to be planar and originating mostly from the spin-orbit coupling in Fe-d states. Reduction of the unitcell volume reduces the magnitude of in-plane magnetic anisotropy, eventually turning it positive which reorients the magnetic moments to the axial direction. Substituting Ge with the smaller Si ions also increases the anisotropy, potentially enhancing the region of stability of the axial magnetization, which is beneficial for magnetic applications such as permanent magnets. Finally, our experimental measurements on samples of Fe3Ge1-xSix confirm these predictions and show that substitution of about 6% of the Ge with Si increases by approximately 35 K the temperature range over which anisotropy is uniaxial.

Authors:
 [1];  [1];  [1]
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1235828
Alternate Identifier(s):
OSTI ID: 1334450; OSTI ID: 1420724
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 118; Journal Issue: 12; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Shanavas, Kavungal Veedu, McGuire, Michael A., and Parker, David S. Electronic and magnetic properties of Si substituted Fe3Ge. United States: N. p., 2015. Web. doi:10.1063/1.4931574.
Shanavas, Kavungal Veedu, McGuire, Michael A., & Parker, David S. Electronic and magnetic properties of Si substituted Fe3Ge. United States. https://doi.org/10.1063/1.4931574
Shanavas, Kavungal Veedu, McGuire, Michael A., and Parker, David S. Wed . "Electronic and magnetic properties of Si substituted Fe3Ge". United States. https://doi.org/10.1063/1.4931574. https://www.osti.gov/servlets/purl/1235828.
@article{osti_1235828,
title = {Electronic and magnetic properties of Si substituted Fe3Ge},
author = {Shanavas, Kavungal Veedu and McGuire, Michael A. and Parker, David S.},
abstractNote = {We studied the effect of Si substitution in the hexagonal Fe3Ge, using first principles calculations. We also find the low temperature magnetic anisotropy in this system to be planar and originating mostly from the spin-orbit coupling in Fe-d states. Reduction of the unitcell volume reduces the magnitude of in-plane magnetic anisotropy, eventually turning it positive which reorients the magnetic moments to the axial direction. Substituting Ge with the smaller Si ions also increases the anisotropy, potentially enhancing the region of stability of the axial magnetization, which is beneficial for magnetic applications such as permanent magnets. Finally, our experimental measurements on samples of Fe3Ge1-xSix confirm these predictions and show that substitution of about 6% of the Ge with Si increases by approximately 35 K the temperature range over which anisotropy is uniaxial.},
doi = {10.1063/1.4931574},
journal = {Journal of Applied Physics},
number = 12,
volume = 118,
place = {United States},
year = {Wed Sep 23 00:00:00 EDT 2015},
month = {Wed Sep 23 00:00:00 EDT 2015}
}

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Cited by: 12 works
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Works referenced in this record:

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Works referencing / citing this record:

Tuning magnetocrystalline anisotropy by cobalt alloying in hexagonal Fe3Ge1
journal, September 2018