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Title: Demonstration of long minority carrier lifetimes in very narrow bandgap ternary InAs/GaInSb superlattices

Abstract

Minority carrier lifetimes in very long wavelength infrared (VLWIR) InAs/GaInSb superlattices (SLs) are reported using time-resolved microwave reflectance measurements. A strain-balanced ternary SL absorber layer of 47.0 Å InAs/21.5 Å Ga0.75In0.25Sb, corresponding to a bandgap of ~50 meV, is found to have a minority carrier lifetime of 140 ± 20 ns at ~18 K. This lifetime is extraordinarily long, when compared to lifetime values previously reported for other VLWIR SL detector materials. As a result, this enhancement is attributed to the strain-engineered ternary design, which offers a variety of epitaxial advantages and ultimately leads to a reduction of defect-mediated recombination centers.

Authors:
 [1];  [1];  [1];  [1];  [2];  [2]
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  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Wright-Patterson Air Force Base, Ohio (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1235314
Alternate Identifier(s):
OSTI ID: 1420514
Report Number(s):
SAND-2015-4640J
Journal ID: ISSN 0003-6951; APPLAB; 590730
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 13; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; sonoluminescence; carrier lifetimes; superlattices; III-V semiconductors; band gap

Citation Formats

Olson, Benjamin Varberg, Kim, Jin K., Kadlec, Emil Andrew, Shaner, Eric A., Haugan, Heather J., and Brown, Gail J. Demonstration of long minority carrier lifetimes in very narrow bandgap ternary InAs/GaInSb superlattices. United States: N. p., 2015. Web. doi:10.1063/1.4932056.
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Olson, Benjamin Varberg, Kim, Jin K., Kadlec, Emil Andrew, Shaner, Eric A., Haugan, Heather J., & Brown, Gail J. Demonstration of long minority carrier lifetimes in very narrow bandgap ternary InAs/GaInSb superlattices. United States. https://doi.org/10.1063/1.4932056
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Olson, Benjamin Varberg, Kim, Jin K., Kadlec, Emil Andrew, Shaner, Eric A., Haugan, Heather J., and Brown, Gail J. Mon . "Demonstration of long minority carrier lifetimes in very narrow bandgap ternary InAs/GaInSb superlattices". United States. https://doi.org/10.1063/1.4932056. https://www.osti.gov/servlets/purl/1235314.
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@article{osti_1235314,
title = {Demonstration of long minority carrier lifetimes in very narrow bandgap ternary InAs/GaInSb superlattices},
author = {Olson, Benjamin Varberg and Kim, Jin K. and Kadlec, Emil Andrew and Shaner, Eric A. and Haugan, Heather J. and Brown, Gail J.},
abstractNote = {Minority carrier lifetimes in very long wavelength infrared (VLWIR) InAs/GaInSb superlattices (SLs) are reported using time-resolved microwave reflectance measurements. A strain-balanced ternary SL absorber layer of 47.0 Å InAs/21.5 Å Ga0.75In0.25Sb, corresponding to a bandgap of ~50 meV, is found to have a minority carrier lifetime of 140 ± 20 ns at ~18 K. This lifetime is extraordinarily long, when compared to lifetime values previously reported for other VLWIR SL detector materials. As a result, this enhancement is attributed to the strain-engineered ternary design, which offers a variety of epitaxial advantages and ultimately leads to a reduction of defect-mediated recombination centers.},
doi = {10.1063/1.4932056},
journal = {Applied Physics Letters},
number = 13,
volume = 107,
place = {United States},
year = {Mon Sep 28 00:00:00 EDT 2015},
month = {Mon Sep 28 00:00:00 EDT 2015}
}
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https://doi.org/10.1063/1.4932056
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    Works referencing / citing this record:

    Realizing high-responsive superlattice organic photodiodes by C60 and zinc phthalocyanine
    journal, October 2018

    Carrier reduction studies of type-II superlattice materials for very long wavelength infrared sensing
    journal, January 2019

    • Haugan, H. J.; Szmulowicz, F.; Elhamri, S.
    • Journal of Applied Physics, Vol. 125, Issue 2
    • DOI: 10.1063/1.5066226
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