Barrier-free subsurface incorporation of 3d metal atoms into Bi(111) films
Abstract
By combining scanning tunneling microscopy with density functional theory it is shown that the Bi(111) surface provides a well-defined incorporation site in the first bilayer that traps highly coordinating atoms such as transition metals (TMs) or noble metals. All deposited atoms assume exactly the same specific sevenfold coordinated subsurface interstitial site while the surface topography remains nearly unchanged. Notably, 3d TMs show a barrier-free incorporation. The observed surface modification by barrier-free subsorption helps to suppress aggregation in clusters. Thus, it allows a tuning of the electronic properties not only for the pure Bi(111) surface, but may also be observed for topological insulators formed by substrate-stabilized Bi bilayers.
- Authors:
-
- Univ. Duisburg-Essen, Duisburg (Germany)
- Univ. Paderborn, Paderborn (Germany)
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Univ. Hannover, Hannover (Germany)
- Publication Date:
- Research Org.:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1214097
- Alternate Identifier(s):
- OSTI ID: 1183227
- Report Number(s):
- BNL-108267-2015-JA
Journal ID: ISSN 1098-0121; PRBMDO; KC0403020
- Grant/Contract Number:
- SC00112704; AC02-98CH10886
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review. B, Condensed Matter and Materials Physics
- Additional Journal Information:
- Journal Volume: 91; Journal Issue: 19; Journal ID: ISSN 1098-0121
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 47 OTHER INSTRUMENTATION
Citation Formats
Klein, C., Vollmers, N. J., Gerstmann, U., Zahl, P., Lukermann, D., Jnawali, G., Pfnur, H., Sutter, P., Tegenkamp, C., Schmidt, W. G., and Horn-von Hoegen, M. Barrier-free subsurface incorporation of 3d metal atoms into Bi(111) films. United States: N. p., 2015.
Web. doi:10.1103/PhysRevB.91.195441.
Klein, C., Vollmers, N. J., Gerstmann, U., Zahl, P., Lukermann, D., Jnawali, G., Pfnur, H., Sutter, P., Tegenkamp, C., Schmidt, W. G., & Horn-von Hoegen, M. Barrier-free subsurface incorporation of 3d metal atoms into Bi(111) films. United States. https://doi.org/10.1103/PhysRevB.91.195441
Klein, C., Vollmers, N. J., Gerstmann, U., Zahl, P., Lukermann, D., Jnawali, G., Pfnur, H., Sutter, P., Tegenkamp, C., Schmidt, W. G., and Horn-von Hoegen, M. Wed .
"Barrier-free subsurface incorporation of 3d metal atoms into Bi(111) films". United States. https://doi.org/10.1103/PhysRevB.91.195441. https://www.osti.gov/servlets/purl/1214097.
@article{osti_1214097,
title = {Barrier-free subsurface incorporation of 3d metal atoms into Bi(111) films},
author = {Klein, C. and Vollmers, N. J. and Gerstmann, U. and Zahl, P. and Lukermann, D. and Jnawali, G. and Pfnur, H. and Sutter, P. and Tegenkamp, C. and Schmidt, W. G. and Horn-von Hoegen, M.},
abstractNote = {By combining scanning tunneling microscopy with density functional theory it is shown that the Bi(111) surface provides a well-defined incorporation site in the first bilayer that traps highly coordinating atoms such as transition metals (TMs) or noble metals. All deposited atoms assume exactly the same specific sevenfold coordinated subsurface interstitial site while the surface topography remains nearly unchanged. Notably, 3d TMs show a barrier-free incorporation. The observed surface modification by barrier-free subsorption helps to suppress aggregation in clusters. Thus, it allows a tuning of the electronic properties not only for the pure Bi(111) surface, but may also be observed for topological insulators formed by substrate-stabilized Bi bilayers.},
doi = {10.1103/PhysRevB.91.195441},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
number = 19,
volume = 91,
place = {United States},
year = {Wed May 27 00:00:00 EDT 2015},
month = {Wed May 27 00:00:00 EDT 2015}
}
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