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Title: Patterned arrays of lateral heterojunctions within monolayer two-dimensional semiconductors

Abstract

The formation of semiconductor heterojunctions and their high density integration are foundations of modern electronics and optoelectronics. To enable two-dimensional (2D) crystalline semiconductors as building blocks in next generation electronics, developing methods to deterministically form lateral heterojunctions is crucial. Here we demonstrate a process strategy for the formation of lithographically-patterned lateral semiconducting heterojunctions within a single 2D crystal. E-beam lithography is used to pattern MoSe2 monolayer crystals with SiO2, and the exposed locations are selectively and totally converted to MoS2 using pulsed laser deposition (PLD) of sulfur in order to form MoSe2/MoS2 heterojunctions in predefined patterns. The junctions and conversion process are characterized by atomically resolved scanning transmission electron microscopy, photoluminescence, and Raman spectroscopy. This demonstration of lateral semiconductor heterojunction arrays within a single 2D crystal is an essential step for the lateral integration of 2D semiconductor building blocks with different electronic and optoelectronic properties for high-density, ultrathin circuitry.

Authors:
 [1]; ORCiD logo [1]; ORCiD logo [1];  [2];  [1];  [3];  [1];  [1];  [1];  [1];  [1];  [1];  [1]
+ Show Author Affiliations
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science; Escuela Politecnica Nacional, Quito (Ecuador). Dept. de Fisica
Publication Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1207054
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
Nature Communications
Additional Journal Information:
Journal Volume: 6; Journal ID: ISSN 2041-1723
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Mahjouri-Samani, Masoud, Lin, Ming-Wei, Wang, Kai, Lupini, Andrew R., Lee, Jaekwang, Basile, Leonardo, Boulesbaa, Abdelaziz, Rouleau, Christopher M., Puretzky, Alexander A., Ivanov, Ilia N., Xiao, Kai, Yoon, Mina, and Geohegan, David B. Patterned arrays of lateral heterojunctions within monolayer two-dimensional semiconductors. United States: N. p., 2015. Web. doi:10.1038/ncomms8749.
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Mahjouri-Samani, Masoud, Lin, Ming-Wei, Wang, Kai, Lupini, Andrew R., Lee, Jaekwang, Basile, Leonardo, Boulesbaa, Abdelaziz, Rouleau, Christopher M., Puretzky, Alexander A., Ivanov, Ilia N., Xiao, Kai, Yoon, Mina, & Geohegan, David B. Patterned arrays of lateral heterojunctions within monolayer two-dimensional semiconductors. United States. https://doi.org/10.1038/ncomms8749
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Mahjouri-Samani, Masoud, Lin, Ming-Wei, Wang, Kai, Lupini, Andrew R., Lee, Jaekwang, Basile, Leonardo, Boulesbaa, Abdelaziz, Rouleau, Christopher M., Puretzky, Alexander A., Ivanov, Ilia N., Xiao, Kai, Yoon, Mina, and Geohegan, David B. Wed . "Patterned arrays of lateral heterojunctions within monolayer two-dimensional semiconductors". United States. https://doi.org/10.1038/ncomms8749. https://www.osti.gov/servlets/purl/1207054.
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@article{osti_1207054,
title = {Patterned arrays of lateral heterojunctions within monolayer two-dimensional semiconductors},
author = {Mahjouri-Samani, Masoud and Lin, Ming-Wei and Wang, Kai and Lupini, Andrew R. and Lee, Jaekwang and Basile, Leonardo and Boulesbaa, Abdelaziz and Rouleau, Christopher M. and Puretzky, Alexander A. and Ivanov, Ilia N. and Xiao, Kai and Yoon, Mina and Geohegan, David B.},
abstractNote = {The formation of semiconductor heterojunctions and their high density integration are foundations of modern electronics and optoelectronics. To enable two-dimensional (2D) crystalline semiconductors as building blocks in next generation electronics, developing methods to deterministically form lateral heterojunctions is crucial. Here we demonstrate a process strategy for the formation of lithographically-patterned lateral semiconducting heterojunctions within a single 2D crystal. E-beam lithography is used to pattern MoSe2 monolayer crystals with SiO2, and the exposed locations are selectively and totally converted to MoS2 using pulsed laser deposition (PLD) of sulfur in order to form MoSe2/MoS2 heterojunctions in predefined patterns. The junctions and conversion process are characterized by atomically resolved scanning transmission electron microscopy, photoluminescence, and Raman spectroscopy. This demonstration of lateral semiconductor heterojunction arrays within a single 2D crystal is an essential step for the lateral integration of 2D semiconductor building blocks with different electronic and optoelectronic properties for high-density, ultrathin circuitry.},
doi = {10.1038/ncomms8749},
journal = {Nature Communications},
number = ,
volume = 6,
place = {United States},
year = {Wed Jul 22 00:00:00 EDT 2015},
month = {Wed Jul 22 00:00:00 EDT 2015}
}
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https://doi.org/10.1038/ncomms8749
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    • DOI: 10.1115/1.4043142

    Dislocation-driven growth of two-dimensional lateral quantum-well superlattices
    journal, March 2018

    Robust epitaxial growth of two-dimensional heterostructures, multiheterostructures, and superlattices
    journal, August 2017

    Manufacturing strategies for wafer-scale two-dimensional transition metal dichalcogenide heterolayers
    journal, February 2020

    • Wang, Mengjing; Li, Hao; Ko, Tae-Jun
    • Journal of Materials Research, Vol. 35, Issue 11
    • DOI: 10.1557/jmr.2020.27

    A two-dimensional Fe-doped SnS2 magnetic semiconductor
    journal, December 2017

    Reconfigurable two-dimensional optoelectronic devices enabled by local ferroelectric polarization
    journal, July 2019

    Centimeter-scale Green Integration of Layer-by-Layer 2D TMD vdW Heterostructures on Arbitrary Substrates by Water-Assisted Layer Transfer
    journal, February 2019

    Focused helium-ion beam irradiation effects on electrical transport properties of few-layer WSe2: enabling nanoscale direct write homo-junctions
    journal, June 2016

    • Stanford, Michael G.; Pudasaini, Pushpa Raj; Belianinov, Alex
    • Scientific Reports, Vol. 6, Issue 1
    • DOI: 10.1038/srep27276

    Nanoforging Single Layer MoSe2 Through Defect Engineering with Focused Helium Ion Beams
    journal, August 2016

    • Iberi, Vighter; Liang, Liangbo; Ievlev, Anton V.
    • Scientific Reports, Vol. 6, Issue 1
    • DOI: 10.1038/srep30481

    Dislocation-driven growth of two-dimensional lateral quantum-well superlattices
    journal, March 2018

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