LaTiO₃/KTaO₃ interfaces: A new two-dimensional electron gas system
Abstract
We report a new 2D electron gas (2DEG) system at the interface between a Mott insulator, LaTiO₃, and a band insulator, KTaO₃. For LaTiO₃/KTaO₃ interfaces, we observe metallic conduction from 2 K to 300 K. One serious technological limitation of SrTiO₃-based conducting oxide interfaces for electronics applications is the relatively low carrier mobility (0.5-10 cm²/V s) of SrTiO₃ at room temperature. By using KTaO₃, we achieve mobilities in LaTiO₃/KTaO₃ interfaces as high as 21 cm²/V s at room temperature, over a factor of 3 higher than observed in doped bulk SrTiO₃. By density functional theory, we attribute the higher mobility in KTaO₃ 2DEGs to the smaller effective mass for electrons in KTaO₃.
- Authors:
-
- Yale Univ., New Haven, CT (United States)
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Brookhaven National Lab. (BNL), Upton, NY (United States); Nanjing Univ. (China)
- Publication Date:
- Research Org.:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1191184
- Grant/Contract Number:
- AC02-98CH10886
- Resource Type:
- Accepted Manuscript
- Journal Name:
- APL Materials
- Additional Journal Information:
- Journal Volume: 3; Journal Issue: 3; Journal ID: ISSN 2166-532X
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Zou, K., Ismail-Beigi, Sohrab, Kisslinger, Kim, Shen, Xuan, Su, Dong, Walker, F. J., and Ahn, C. H. LaTiO₃/KTaO₃ interfaces: A new two-dimensional electron gas system. United States: N. p., 2015.
Web. doi:10.1063/1.4914310.
Zou, K., Ismail-Beigi, Sohrab, Kisslinger, Kim, Shen, Xuan, Su, Dong, Walker, F. J., & Ahn, C. H. LaTiO₃/KTaO₃ interfaces: A new two-dimensional electron gas system. United States. https://doi.org/10.1063/1.4914310
Zou, K., Ismail-Beigi, Sohrab, Kisslinger, Kim, Shen, Xuan, Su, Dong, Walker, F. J., and Ahn, C. H. Sun .
"LaTiO₃/KTaO₃ interfaces: A new two-dimensional electron gas system". United States. https://doi.org/10.1063/1.4914310. https://www.osti.gov/servlets/purl/1191184.
@article{osti_1191184,
title = {LaTiO₃/KTaO₃ interfaces: A new two-dimensional electron gas system},
author = {Zou, K. and Ismail-Beigi, Sohrab and Kisslinger, Kim and Shen, Xuan and Su, Dong and Walker, F. J. and Ahn, C. H.},
abstractNote = {We report a new 2D electron gas (2DEG) system at the interface between a Mott insulator, LaTiO₃, and a band insulator, KTaO₃. For LaTiO₃/KTaO₃ interfaces, we observe metallic conduction from 2 K to 300 K. One serious technological limitation of SrTiO₃-based conducting oxide interfaces for electronics applications is the relatively low carrier mobility (0.5-10 cm²/V s) of SrTiO₃ at room temperature. By using KTaO₃, we achieve mobilities in LaTiO₃/KTaO₃ interfaces as high as 21 cm²/V s at room temperature, over a factor of 3 higher than observed in doped bulk SrTiO₃. By density functional theory, we attribute the higher mobility in KTaO₃ 2DEGs to the smaller effective mass for electrons in KTaO₃.},
doi = {10.1063/1.4914310},
journal = {APL Materials},
number = 3,
volume = 3,
place = {United States},
year = {Sun Mar 01 00:00:00 EST 2015},
month = {Sun Mar 01 00:00:00 EST 2015}
}
Web of Science
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