The Seebeck Coefficient and Phonon Drag in Silicon
Abstract
We present a theory of the phonon-drag Seebeck coe cient in nondegenerate semiconductors, and apply it to silicon for temperatures 30 < T < 300K. Our calculation uses only parameters from the literature, and previous calculations of the phonon lifetime. We nd excellent agreement with the measurements of Geballe and Hull [Phys.Rev. 98, 940 (1955)]. The phonon-drag term dominates at low temperature, and shows an important dependence on the dimensions of the experimental sample.
- Authors:
-
- Pennsylvania State Univ., University Park, PA (United States)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Boston College, Chestnut Hill, MA (United States)
- Publication Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 1185754
- Grant/Contract Number:
- AC05-00OR22725
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 116; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Mahan, Gerald, Lindsay, Lucas R., and Broido, David. The Seebeck Coefficient and Phonon Drag in Silicon. United States: N. p., 2014.
Web. doi:10.1063/1.4904925.
Mahan, Gerald, Lindsay, Lucas R., & Broido, David. The Seebeck Coefficient and Phonon Drag in Silicon. United States. https://doi.org/10.1063/1.4904925
Mahan, Gerald, Lindsay, Lucas R., and Broido, David. Mon .
"The Seebeck Coefficient and Phonon Drag in Silicon". United States. https://doi.org/10.1063/1.4904925. https://www.osti.gov/servlets/purl/1185754.
@article{osti_1185754,
title = {The Seebeck Coefficient and Phonon Drag in Silicon},
author = {Mahan, Gerald and Lindsay, Lucas R. and Broido, David},
abstractNote = {We present a theory of the phonon-drag Seebeck coe cient in nondegenerate semiconductors, and apply it to silicon for temperatures 30 < T < 300K. Our calculation uses only parameters from the literature, and previous calculations of the phonon lifetime. We nd excellent agreement with the measurements of Geballe and Hull [Phys.Rev. 98, 940 (1955)]. The phonon-drag term dominates at low temperature, and shows an important dependence on the dimensions of the experimental sample.},
doi = {10.1063/1.4904925},
journal = {Journal of Applied Physics},
number = ,
volume = 116,
place = {United States},
year = {Mon Dec 29 00:00:00 EST 2014},
month = {Mon Dec 29 00:00:00 EST 2014}
}
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Works referencing / citing this record:
Enhancing the Seebeck effect in Ge/Si through the combination of interfacial design features
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- Nadtochiy, Andriy; Kuryliuk, Vasyl; Strelchuk, Viktor
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Ab initio optimization of phonon drag effect for lower-temperature thermoelectric energy conversion
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First-principles calculations of thermal, electrical, and thermoelectric transport properties of semiconductors
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A microstructuring route to enhanced thermoelectric efficiency of reduced graphene oxide films
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- Mehmood, Tariq; Kim, Jin Ho; Lee, Do-Joong
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Thermoelectric coefficients of -doped silicon from first principles via the solution of the Boltzmann transport equation
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journal, November 2019
- Nadtochiy, Andriy; Kuryliuk, Vasyl; Strelchuk, Viktor
- Scientific Reports, Vol. 9, Issue 1