Experimental study of the valence band of Bi2Se3

Gao, Yi-Bin; He, Bin; Parker, David; Androulakis, Ioannis; Heremans, Joseph P.

doi:10.1103/PhysRevB.90.125204

Title: Experimental study of the valence band of ${Bi}_{2} {Se}_{3}$

Abstract

The valence band of Bi₂Se₃ is investigated with Shubnikov - de Haas measurements, galvanomagnetic and thermoelectric transport. At low hole concentration, the hole Fermi surface is closed and box-like, but at higher concentrations it develops tube-like extensions that are open. The experimentally determined density-of-states effective mass is lighter than density-functional theory calculations predict; while we cannot give a definitive explanation for this, we suspect that the theory may lack sufficient precision to compute room-temperature transport properties, such as the Seebeck coefficient, in solids in which there are Van der Waals interlayer bonds.

Authors:

Gao, Yi-Bin ^[1]; He, Bin ^[1]; Parker, David ^[2]; Androulakis, Ioannis ^[3]; Heremans, Joseph P. ^[4]

The Ohio State Univ., Columbus, OH (United States). Dept of Mechanical and Aerospace Engineering
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division
Gentherm, Inc., Azusa, CA (United States)
The Ohio State Univ., Columbus, OH (United States). Dept of Mechanical and Aerospace Engineering; The Ohio State Univ., Columbus, OH (United States). Dept of Physics

Publication Date:: Fri Sep 26 00:00:00 EDT 2014

Research Org.:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1185394

Alternate Identifier(s):: OSTI ID: 1179946

Grant/Contract Number:: AC05-00OR22725; CBET-1048622

Resource Type:: Accepted Manuscript

Journal Name:: Physical Review. B, Condensed Matter and Materials Physics

Additional Journal Information:: Journal Volume: 90; Journal Issue: 12; Journal ID: ISSN 1098-0121

Publisher:: American Physical Society (APS)

Country of Publication:: United States

Language:: English

Subject:: 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; thermoelectric

Citation Formats


                    Gao, Yi-Bin, He, Bin, Parker, David, Androulakis, Ioannis, and Heremans, Joseph P. Experimental study of the valence band of Bi2Se3.  United States: N. p., 2014. 
Web.  doi:10.1103/PhysRevB.90.125204.

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                    Gao, Yi-Bin, He, Bin, Parker, David, Androulakis, Ioannis, & Heremans, Joseph P. Experimental study of the valence band of Bi2Se3.  United States.  https://doi.org/10.1103/PhysRevB.90.125204

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                    Gao, Yi-Bin, He, Bin, Parker, David, Androulakis, Ioannis, and Heremans, Joseph P. Fri .  
"Experimental study of the valence band of Bi2Se3".  United States.  https://doi.org/10.1103/PhysRevB.90.125204.  https://www.osti.gov/servlets/purl/1185394.

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@article{osti_1185394,

  title        = {Experimental study of the valence band of Bi2Se3},

  author       = {Gao, Yi-Bin and He, Bin and Parker, David and Androulakis, Ioannis and Heremans, Joseph P.},

  abstractNote = {The valence band of Bi2Se3 is investigated with Shubnikov - de Haas measurements, galvanomagnetic and thermoelectric transport. At low hole concentration, the hole Fermi surface is closed and box-like, but at higher concentrations it develops tube-like extensions that are open. The experimentally determined density-of-states effective mass is lighter than density-functional theory calculations predict; while we cannot give a definitive explanation for this, we suspect that the theory may lack sufficient precision to compute room-temperature transport properties, such as the Seebeck coefficient, in solids in which there are Van der Waals interlayer bonds.},

  doi          = {10.1103/PhysRevB.90.125204},

  journal      = {Physical Review. B, Condensed Matter and Materials Physics},

  number       = 12,

  volume       = 90,

  place        = {United States},

  year         = {Fri Sep 26 00:00:00 EDT 2014},

  month        = {Fri Sep 26 00:00:00 EDT 2014}

}

Copy to clipboard

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Works referenced in this record:

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Works referencing / citing this record:

Complex Band Structures and Lattice Dynamics of Bi ₂ Te ₃ ‐Based Compounds and Solid Solutions
journal, April 2019

Fang, Teng; Li, Xin; Hu, Chaoliang
Advanced Functional Materials, Vol. 29, Issue 28
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Tetradymites as thermoelectrics and topological insulators
journal, September 2017

Heremans, Joseph P.; Cava, Robert J.; Samarth, Nitin
Nature Reviews Materials, Vol. 2, Issue 10
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Two-band model interpretation of the p - to n -transition in ternary tetradymite topological insulators
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DOI: 10.1088/0022-3727/49/50/505304

Two Band Model Interpretation of the p to n Transition in Ternary Tetradymite Topological Insulators
preprint, January 2015

Chasapis, T. C.; Koumoulis, D.; Leung, B.
arXiv
DOI: 10.48550/arxiv.1506.05524

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Similar Records

Title: Experimental study of the valence band of Bi 2 Se 3

Abstract

Citation Formats

Massive Dirac Fermion on the Surface of a Magnetically Doped Topological Insulator journal, August 2010

Generalized Gradient Approximation Made Simple journal, October 1996

THERMOPOWER OF SnTe FROM BOLTZMANN TRANSPORT CALCULATIONS journal, December 2010

p-type Bi2Se3 for topological insulator and low-temperature thermoelectric applications journal, May 2009

Simple tuning of carrier type in topological insulator Bi2Se3 by Mn doping journal, October 2012

Van der Waals density functional: An appropriate exchange functional journal, April 2010

Galvanomagnetic Properties of Bi2Se3with Free Carrier Densities below 5 × 1017 cm−3 journal, October 1975

Hexagonally Deformed Fermi Surface of the 3D Topological Insulator Bi 2 Se 3 journal, August 2010

XCrySDen—a new program for displaying crystalline structures and electron densities journal, June 1999

Nonstoichiometric doping and Bi antisite defect in single crystal Bi 2 Se 3 journal, August 2012

Magnetic Oscillations in Metals book, October 2011

BoltzTraP. A code for calculating band-structure dependent quantities journal, July 2006

Electronic structure and thermoelectric properties of bismuth telluride and bismuth selenide journal, January 1997

Trigonal warping of the Fermi surface in n-Bi2Se3 journal, November 1973

High-temperature thermoelectric performance of heavily doped PbSe journal, July 2010

Electronic structure of Bi 2 X 3 ( X = S , Se , T ) compounds: Comparison of theoretical calculations with photoemission studies journal, February 2002

The crystal structure of Bi2Te3−xSex journal, March 1963

Robust p-type behavior in polycrystalline, ball-milled, magnesium-doped Bi2Se3 journal, November 2013

Numerical extraction of de Haas–van Alphen frequencies from calculated band energies journal, February 2012

Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface journal, May 2009

Mobility in single crystal Bi2Se3 journal, October 1972

Complex Band Structures and Lattice Dynamics of Bi 2 Te 3 ‐Based Compounds and Solid Solutions journal, April 2019

Tetradymites as thermoelectrics and topological insulators journal, September 2017

Two-band model interpretation of the p - to n -transition in ternary tetradymite topological insulators journal, August 2015

Optical properties of Bi 2 Se 3 : from bulk to ultrathin films journal, November 2016

Two Band Model Interpretation of the p to n Transition in Ternary Tetradymite Topological Insulators preprint, January 2015

Title: Experimental study of the valence band of ${Bi}_{2} {Se}_{3}$

Massive Dirac Fermion on the Surface of a Magnetically Doped Topological Insulator
journal, August 2010

Generalized Gradient Approximation Made Simple
journal, October 1996

THERMOPOWER OF SnTe FROM BOLTZMANN TRANSPORT CALCULATIONS
journal, December 2010

$p$ -type ${Bi}_{2} {Se}_{3}$ for topological insulator and low-temperature thermoelectric applications
journal, May 2009

Simple tuning of carrier type in topological insulator Bi₂Se₃ by Mn doping
journal, October 2012

Van der Waals density functional: An appropriate exchange functional
journal, April 2010

Galvanomagnetic Properties of Bi2Se3with Free Carrier Densities below 5 × 1017 cm−3
journal, October 1975

Hexagonally Deformed Fermi Surface of the 3D Topological Insulator ${Bi}_{2} {Se}_{3}$
journal, August 2010

XCrySDen—a new program for displaying crystalline structures and electron densities
journal, June 1999

Nonstoichiometric doping and Bi antisite defect in single crystal Bi $_{2}$ Se $_{3}$
journal, August 2012

Magnetic Oscillations in Metals
book, October 2011

BoltzTraP. A code for calculating band-structure dependent quantities
journal, July 2006

Electronic structure and thermoelectric properties of bismuth telluride and bismuth selenide
journal, January 1997

Trigonal warping of the Fermi surface in n-Bi2Se3
journal, November 1973

High-temperature thermoelectric performance of heavily doped PbSe
journal, July 2010

Electronic structure of ${Bi}_{2} X_{3}$ $(X = S, Se, T)$ compounds: Comparison of theoretical calculations with photoemission studies
journal, February 2002

The crystal structure of Bi2Te3−xSex
journal, March 1963

Robust p-type behavior in polycrystalline, ball-milled, magnesium-doped Bi2Se3
journal, November 2013

Numerical extraction of de Haas–van Alphen frequencies from calculated band energies
journal, February 2012

Topological insulators in Bi₂Se₃, Bi₂Te₃ and Sb₂Te₃ with a single Dirac cone on the surface
journal, May 2009

Mobility in single crystal Bi2Se3
journal, October 1972

Complex Band Structures and Lattice Dynamics of Bi ₂ Te ₃ ‐Based Compounds and Solid Solutions
journal, April 2019

Tetradymites as thermoelectrics and topological insulators
journal, September 2017

Two-band model interpretation of the p - to n -transition in ternary tetradymite topological insulators
journal, August 2015

Optical properties of Bi ₂ Se ₃ : from bulk to ultrathin films
journal, November 2016

Two Band Model Interpretation of the p to n Transition in Ternary Tetradymite Topological Insulators
preprint, January 2015