Si⁺-implanted Si-wire waveguide photodetectors for the mid-infrared
Abstract
CMOS-compatible Si⁺-implanted Si-waveguide p-i-n photodetectors operating at room temperature and at mid-infrared wavelengths from 2.2 to 2.3 µm are demonstrated. Responsivities of 9.9 ± 2.0 mA/W are measured at a 5 V reverse bias with an estimated internal quantum efficiency of 2.7 – 4.5%. The dark current is found to vary from a few microamps down to less than a nanoamp after a post-implantation annealing of 350°C. The measured photocurrent dependence on input power shows a linear correspondence over more than three decades, and the frequency response of a 250 µm-length p-i-n device is measured to be ~1.7 GHz for a wavelength of λ = 2.2 µm, thus potentially opening up new communication bands for photonic integrated circuits.
- Authors:
-
- Columbia Univ., New York, NY (United States). Microelectronics Sciences Lab.
- Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials
- Columbia Univ., New York, NY (United States). Dept. of Electrical Engineering
- State Univ. of New York, Albany, NY (United States). College of Nanoscale Science and Engineering
- IBM, Yorktown Heights, NY (United States). Thomas J. Watson Research Center
- Publication Date:
- Research Org.:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1182485
- Report Number(s):
- BNL-107329-2015-JA
Journal ID: ISSN 1094-4087; R&D Project: 16062; KC0403020
- Grant/Contract Number:
- SC00112704
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Optics Express
- Additional Journal Information:
- Journal Volume: 22; Journal Issue: 22; Journal ID: ISSN 1094-4087
- Publisher:
- Optical Society of America (OSA)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; functional nanomaterials
Citation Formats
Souhan, Brian, Lu, Ming, Grote, Richard R., Chen, Christine P., Huang, Hsu-Cheng, Driscoll, Jeffrey B., Stein, Aaron, Bakhru, Hassaram, Bergman, Keren, Green, William M. J., and Osgood, Jr., Richard M. Si⁺-implanted Si-wire waveguide photodetectors for the mid-infrared. United States: N. p., 2014.
Web. doi:10.1364/OE.22.027415.
Souhan, Brian, Lu, Ming, Grote, Richard R., Chen, Christine P., Huang, Hsu-Cheng, Driscoll, Jeffrey B., Stein, Aaron, Bakhru, Hassaram, Bergman, Keren, Green, William M. J., & Osgood, Jr., Richard M. Si⁺-implanted Si-wire waveguide photodetectors for the mid-infrared. United States. https://doi.org/10.1364/OE.22.027415
Souhan, Brian, Lu, Ming, Grote, Richard R., Chen, Christine P., Huang, Hsu-Cheng, Driscoll, Jeffrey B., Stein, Aaron, Bakhru, Hassaram, Bergman, Keren, Green, William M. J., and Osgood, Jr., Richard M. Tue .
"Si⁺-implanted Si-wire waveguide photodetectors for the mid-infrared". United States. https://doi.org/10.1364/OE.22.027415. https://www.osti.gov/servlets/purl/1182485.
@article{osti_1182485,
title = {Si⁺-implanted Si-wire waveguide photodetectors for the mid-infrared},
author = {Souhan, Brian and Lu, Ming and Grote, Richard R. and Chen, Christine P. and Huang, Hsu-Cheng and Driscoll, Jeffrey B. and Stein, Aaron and Bakhru, Hassaram and Bergman, Keren and Green, William M. J. and Osgood, Jr., Richard M.},
abstractNote = {CMOS-compatible Si⁺-implanted Si-waveguide p-i-n photodetectors operating at room temperature and at mid-infrared wavelengths from 2.2 to 2.3 µm are demonstrated. Responsivities of 9.9 ± 2.0 mA/W are measured at a 5 V reverse bias with an estimated internal quantum efficiency of 2.7 – 4.5%. The dark current is found to vary from a few microamps down to less than a nanoamp after a post-implantation annealing of 350°C. The measured photocurrent dependence on input power shows a linear correspondence over more than three decades, and the frequency response of a 250 µm-length p-i-n device is measured to be ~1.7 GHz for a wavelength of λ = 2.2 µm, thus potentially opening up new communication bands for photonic integrated circuits.},
doi = {10.1364/OE.22.027415},
journal = {Optics Express},
number = 22,
volume = 22,
place = {United States},
year = {Tue Oct 28 00:00:00 EDT 2014},
month = {Tue Oct 28 00:00:00 EDT 2014}
}
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Works referencing / citing this record:
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