Argon–germane in situ plasma clean for reduced temperature Ge on Si epitaxy by high density plasma chemical vapor deposition

Douglas, Erica A.; Sheng, Josephine J.; Verley, Jason C.; Carroll, Malcolm S.

doi:10.1116/1.4921590

Title: Argon–germane in situ plasma clean for reduced temperature Ge on Si epitaxy by high density plasma chemical vapor deposition

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Abstract

We found that the demand for integration of near infrared optoelectronic functionality with silicon complementary metal oxide semiconductor (CMOS) technology has for many years motivated the investigation of low temperature germanium on silicon deposition processes. Our work describes the development of a high density plasma chemical vapor deposition process that uses a low temperature (<460 °C) in situ germane/argon plasma surface preparation step for epitaxial growth of germanium on silicon. It is shown that the germane/argon plasma treatment sufficiently removes SiO_x and carbon at the surface to enable germanium epitaxy. Finally, the use of this surface preparation step demonstrates an alternative way to produce germanium epitaxy at reduced temperatures, a key enabler for increased flexibility of integration with CMOS back-end-of-line fabrication.

Authors:

Douglas, Erica A. ^[1]; Sheng, Josephine J. ^[1]; Verley, Jason C. ^[1]; Carroll, Malcolm S. ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Publication Date:: Thu Jun 04 00:00:00 EDT 2015

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA)

OSTI Identifier:: 1146036

Report Number(s):: SAND-2008-0556J
Journal ID: ISSN 2166-2746; JVTBD9; 519568; TRN: US1600495

Grant/Contract Number:: AC04-94AL85000

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics

Additional Journal Information:: Journal Volume: 33; Journal Issue: 4; Journal ID: ISSN 2166-2746

Publisher:: American Vacuum Society/AIP

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats


                    Douglas, Erica A., Sheng, Josephine J., Verley, Jason C., and Carroll, Malcolm S. Argon–germane in situ plasma clean for reduced temperature Ge on Si epitaxy by high density plasma chemical vapor deposition.  United States: N. p., 2015. 
Web.  doi:10.1116/1.4921590.

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                    Douglas, Erica A., Sheng, Josephine J., Verley, Jason C., & Carroll, Malcolm S. Argon–germane in situ plasma clean for reduced temperature Ge on Si epitaxy by high density plasma chemical vapor deposition.  United States.  https://doi.org/10.1116/1.4921590

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                    Douglas, Erica A., Sheng, Josephine J., Verley, Jason C., and Carroll, Malcolm S. Thu .  
"Argon–germane in situ plasma clean for reduced temperature Ge on Si epitaxy by high density plasma chemical vapor deposition".  United States.  https://doi.org/10.1116/1.4921590.  https://www.osti.gov/servlets/purl/1146036.

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@article{osti_1146036,

  title        = {Argon–germane in situ plasma clean for reduced temperature Ge on Si epitaxy by high density plasma chemical vapor deposition},

  author       = {Douglas, Erica A. and Sheng, Josephine J. and Verley, Jason C. and Carroll, Malcolm S.},

  abstractNote = {We found that the demand for integration of near infrared optoelectronic functionality with silicon complementary metal oxide semiconductor (CMOS) technology has for many years motivated the investigation of low temperature germanium on silicon deposition processes. Our work describes the development of a high density plasma chemical vapor deposition process that uses a low temperature (<460 °C) in situ germane/argon plasma surface preparation step for epitaxial growth of germanium on silicon. It is shown that the germane/argon plasma treatment sufficiently removes SiOx and carbon at the surface to enable germanium epitaxy. Finally, the use of this surface preparation step demonstrates an alternative way to produce germanium epitaxy at reduced temperatures, a key enabler for increased flexibility of integration with CMOS back-end-of-line fabrication.},

  doi          = {10.1116/1.4921590},

  journal      = {Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics},

  number       = 4,

  volume       = 33,

  place        = {United States},

  year         = {Thu Jun 04 00:00:00 EDT 2015},

  month        = {Thu Jun 04 00:00:00 EDT 2015}

}

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