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Title: Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

Abstract

InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applicationsmore » in optoelectronics and photovoltaics.« less

Authors:
 [1];  [2];  [1];  [1];  [3];  [3];  [4];  [4];  [5];  [5];  [5];  [6]
+ Show Author Affiliations
  1. Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany)
  2. Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany)
  3. Brookhaven National Lab. (BNL), Upton, NY (United States)
  4. Inst. Juame Almera, Barcelona (Spain)
  5. Univ. of Wurzburg (Germany)
  6. Institute of Bio- and Nanosystems (IBN-1), Research Centre Juelich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany)
Publication Date:
Research Org.:
Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of FutureInformation Technology (Germany); Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Office of Technology Development (EE-20)
OSTI Identifier:
1076502
Grant/Contract Number:  
AC02-98CH1-886; MAT2007-63617
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 109; Journal Issue: 1; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; NANOWIRE; INGAN ON GAN; CATALYST-FREE; MBE; GANIN

Citation Formats

Limbach, F., Gotschke, T., Stoica, T., Calarco, R., Sutter, E., Ciston, J., Cusco, R., Artus, L., Kremling, S., Hofling, S., Worschech, L., and Grutzmacher, D. Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy. United States: N. p., 2011. Web. doi:10.1063/1.3530634.
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Limbach, F., Gotschke, T., Stoica, T., Calarco, R., Sutter, E., Ciston, J., Cusco, R., Artus, L., Kremling, S., Hofling, S., Worschech, L., & Grutzmacher, D. Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy. United States. https://doi.org/10.1063/1.3530634
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Limbach, F., Gotschke, T., Stoica, T., Calarco, R., Sutter, E., Ciston, J., Cusco, R., Artus, L., Kremling, S., Hofling, S., Worschech, L., and Grutzmacher, D. Sat . "Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy". United States. https://doi.org/10.1063/1.3530634. https://www.osti.gov/servlets/purl/1076502.
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@article{osti_1076502,
title = {Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy},
author = {Limbach, F. and Gotschke, T. and Stoica, T. and Calarco, R. and Sutter, E. and Ciston, J. and Cusco, R. and Artus, L. and Kremling, S. and Hofling, S. and Worschech, L. and Grutzmacher, D.},
abstractNote = {InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.},
doi = {10.1063/1.3530634},
journal = {Journal of Applied Physics},
number = 1,
volume = 109,
place = {United States},
year = {Sat Jan 01 00:00:00 EST 2011},
month = {Sat Jan 01 00:00:00 EST 2011}
}
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https://doi.org/10.1063/1.3530634
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    Works referencing / citing this record:

    Circumventing the miscibility gap in InGaN nanowires emitting from blue to red
    journal, September 2018

    Polarity of GaN nanowires grown by plasma-assisted molecular beam epitaxy on Si(111)
    journal, December 2011

    Engineering the Carrier Dynamics of InGaN Nanowire White Light-Emitting Diodes by Distributed p-AlGaN Electron Blocking Layers
    journal, January 2015

    • Nguyen, Hieu Pham Trung; Djavid, Mehrdad; Woo, Steffi Y.
    • Scientific Reports, Vol. 5, Issue 1
    • DOI: 10.1038/srep07744
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