Ultraefficient resistance switching between charge ordered phases in 1T-TaS2 with a single picosecond electrical pulse
Abstract
Progress in high-performance computing demands significant advances in memory technology. Among novel memory technologies that promise efficient device operation on a sub-ns timescale, resistance switching between charge ordered phases of 1T-TaS2 has shown to be potentially useful for development of high-speed, energy efficient nonvolatile memory devices. Measurement of the electrical operation of such devices in the picosecond regime is technically challenging and hitherto still largely unexplored. Here, we use an optoelectronic “laboratory-on-a-chip” experiment for measurement of ultrafast memory switching, enabling accurate measurement of electrical switching parameters with 100 fs temporal resolution. Photoexcitation and electro-optic sampling on a (Cd,Mn)Te substrate are used to generate and, subsequently, measure electrical pulse propagation with intra-band excitation and sub-gap probing, respectively. We demonstrate high contrast nonvolatile resistance switching from high to low resistance states of a 1T-TaS2 device using single sub-2ps electrical pulses. Using detailed modeling, we find that the switching energy density per unit area is exceptionally small, EA=9.4 fJ/μm2. Finally, the speed and energy efficiency of an electronic “write” process place the 1T-TaS2 devices into a category of their own among new generation nonvolatile memory devices.
- Authors:
-
[1];
[1];
[2];
[1];
[2];
[5];
[5];
[7];
[5];
[3]
- Jozef Stefan Inst. (IJS), Ljubljana (Slovenia); Univ. of Ljubljana (Slovenia)
- Jozef Stefan Inst. (IJS), Ljubljana (Slovenia)
- Jozef Stefan Inst. (IJS), Ljubljana (Slovenia); CENN Nanocenter, Ljubljiana (Slovenia)
- ELEP Electronics, Ljubljana (Slovenia)
- Univ. of Rochester, NY (United States)
- Brimrose Technology Corporation, Sparks, MD (United States)
- Naval Research Lab. (NRL), Washington, DC (United States)
- Publication Date:
- Research Org.:
- Brimrose Technology Corporation, Sparks, MD (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Office of SBIR/STTR Programs (SBIR/STTR); Slovenian Research Agency; Slovene Ministry of Science; European Research Council (ERC); USDOE
- OSTI Identifier:
- 1979107
- Alternate Identifier(s):
- OSTI ID: 1873603
- Grant/Contract Number:
- SC0021468; P1-0040; N1-0092; J1-2455; PR-10496; PR-08972; I0-0005; Raziskovalci-2.1-IJS-952005; GA767176
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 120; Journal Issue: 25; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; Physics
Citation Formats
Venturini, Rok, Mraz, Anže, Vaskivskyi, Igor, Vaskivskyi, Yevhenii, Svetin, Damjan, Mertelj, Tomaž, Pavlovič, Leon, Cheng, Jing, Chen, Genyu, Amarasinghe, Priyanthi, Qadri, Syed B., Trivedi, Sudhir B., Sobolewski, Roman, and Mihailovic, Dragan. Ultraefficient resistance switching between charge ordered phases in 1T-TaS2 with a single picosecond electrical pulse. United States: N. p., 2022.
Web. doi:10.1063/5.0096850.
Venturini, Rok, Mraz, Anže, Vaskivskyi, Igor, Vaskivskyi, Yevhenii, Svetin, Damjan, Mertelj, Tomaž, Pavlovič, Leon, Cheng, Jing, Chen, Genyu, Amarasinghe, Priyanthi, Qadri, Syed B., Trivedi, Sudhir B., Sobolewski, Roman, & Mihailovic, Dragan. Ultraefficient resistance switching between charge ordered phases in 1T-TaS2 with a single picosecond electrical pulse. United States. https://doi.org/10.1063/5.0096850
Venturini, Rok, Mraz, Anže, Vaskivskyi, Igor, Vaskivskyi, Yevhenii, Svetin, Damjan, Mertelj, Tomaž, Pavlovič, Leon, Cheng, Jing, Chen, Genyu, Amarasinghe, Priyanthi, Qadri, Syed B., Trivedi, Sudhir B., Sobolewski, Roman, and Mihailovic, Dragan. Thu .
"Ultraefficient resistance switching between charge ordered phases in 1T-TaS2 with a single picosecond electrical pulse". United States. https://doi.org/10.1063/5.0096850. https://www.osti.gov/servlets/purl/1979107.
@article{osti_1979107,
title = {Ultraefficient resistance switching between charge ordered phases in 1T-TaS2 with a single picosecond electrical pulse},
author = {Venturini, Rok and Mraz, Anže and Vaskivskyi, Igor and Vaskivskyi, Yevhenii and Svetin, Damjan and Mertelj, Tomaž and Pavlovič, Leon and Cheng, Jing and Chen, Genyu and Amarasinghe, Priyanthi and Qadri, Syed B. and Trivedi, Sudhir B. and Sobolewski, Roman and Mihailovic, Dragan},
abstractNote = {Progress in high-performance computing demands significant advances in memory technology. Among novel memory technologies that promise efficient device operation on a sub-ns timescale, resistance switching between charge ordered phases of 1T-TaS2 has shown to be potentially useful for development of high-speed, energy efficient nonvolatile memory devices. Measurement of the electrical operation of such devices in the picosecond regime is technically challenging and hitherto still largely unexplored. Here, we use an optoelectronic “laboratory-on-a-chip” experiment for measurement of ultrafast memory switching, enabling accurate measurement of electrical switching parameters with 100 fs temporal resolution. Photoexcitation and electro-optic sampling on a (Cd,Mn)Te substrate are used to generate and, subsequently, measure electrical pulse propagation with intra-band excitation and sub-gap probing, respectively. We demonstrate high contrast nonvolatile resistance switching from high to low resistance states of a 1T-TaS2 device using single sub-2ps electrical pulses. Using detailed modeling, we find that the switching energy density per unit area is exceptionally small, EA=9.4 fJ/μm2. Finally, the speed and energy efficiency of an electronic “write” process place the 1T-TaS2 devices into a category of their own among new generation nonvolatile memory devices.},
doi = {10.1063/5.0096850},
journal = {Applied Physics Letters},
number = 25,
volume = 120,
place = {United States},
year = {Thu Jun 23 00:00:00 EDT 2022},
month = {Thu Jun 23 00:00:00 EDT 2022}
}
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