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Title: Intersubband transitions in nonpolar and semipolar III-nitrides: Materials, devices, and applications

Abstract

In the last two decades, the third-generation wide bandgap semiconductor III-nitrides have revolutionized a myriad of electronic and photonic devices and applications, including power electronics, extreme-environment electronics, RF amplifiers, and optoelectronics such as light-emitting diodes and laser diodes. Recently, III-nitride heterostructures (e.g., AlGaN/GaN) based intersubband transition (ISBT) has garnered considerable research interest for infrared (IR), terahertz (THz), and ultrafast optoelectronics (e.g., photodetectors and quantum cascade lasers) due to its large conduction band offset, large optical phonon energy, and promising room-temperature operation. This paper presents a comprehensive review on the recent progress and challenges of III-nitrides based ISBT from the perspectives of materials, structures, devices, and applications, with a focus on nonpolar and semipolar III-nitrides. Various device structures have been demonstrated for III-nitrides based ISBT, including quantum wells, dots, and wires, among which AlGaN/GaN quantum wells are the most widely used. The effects of device parameters, crystal orientations, and doping on the ISBT properties of AlGaN/GaN quantum wells are discussed. Although the room-temperature operation is still elusive, theoretical and experimental studies show that nonpolar and semipolar III-nitrides based ISBT exhibits tunable ISBT wavelength from far-IR to THz spectral range with higher efficiency compared with polar c-plane ISBT. This review can servemore » as a gateway to and an important reference for the recent progress and challenges of III-nitrides based ISBT and its potential applications in sensing, communication, ultrafast optoelectronics, and integrated photonics.« less

Authors:
ORCiD logo [1];  [1];  [2]; ORCiD logo [1]
+ Show Author Affiliations
  1. Iowa State Univ., Ames, IA (United States)
  2. Rice Univ., Houston, TX (United States)
Publication Date:
Research Org.:
Iowa State Univ., Ames, IA (United States); Energy Frontier Research Centers (EFRC) (United States). Ultra Materials for a Resilient, Smart Electricity Grid (ULTRA); Arizona State Univ., Tempe, AZ (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); Army Research Office (ARO) PECASE
OSTI Identifier:
1979067
Alternate Identifier(s):
OSTI ID: 1871063
Grant/Contract Number:  
SC0021230; W911NF-19-1-0089
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 131; Journal Issue: 21; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; Physics

Citation Formats

Mudiyanselage, Dinusha Herath, Wang, Dawei, Zhao, Yuji, and Fu, Houqiang. Intersubband transitions in nonpolar and semipolar III-nitrides: Materials, devices, and applications. United States: N. p., 2022. Web. doi:10.1063/5.0088021.
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Mudiyanselage, Dinusha Herath, Wang, Dawei, Zhao, Yuji, & Fu, Houqiang. Intersubband transitions in nonpolar and semipolar III-nitrides: Materials, devices, and applications. United States. https://doi.org/10.1063/5.0088021
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Mudiyanselage, Dinusha Herath, Wang, Dawei, Zhao, Yuji, and Fu, Houqiang. Tue . "Intersubband transitions in nonpolar and semipolar III-nitrides: Materials, devices, and applications". United States. https://doi.org/10.1063/5.0088021. https://www.osti.gov/servlets/purl/1979067.
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@article{osti_1979067,
title = {Intersubband transitions in nonpolar and semipolar III-nitrides: Materials, devices, and applications},
author = {Mudiyanselage, Dinusha Herath and Wang, Dawei and Zhao, Yuji and Fu, Houqiang},
abstractNote = {In the last two decades, the third-generation wide bandgap semiconductor III-nitrides have revolutionized a myriad of electronic and photonic devices and applications, including power electronics, extreme-environment electronics, RF amplifiers, and optoelectronics such as light-emitting diodes and laser diodes. Recently, III-nitride heterostructures (e.g., AlGaN/GaN) based intersubband transition (ISBT) has garnered considerable research interest for infrared (IR), terahertz (THz), and ultrafast optoelectronics (e.g., photodetectors and quantum cascade lasers) due to its large conduction band offset, large optical phonon energy, and promising room-temperature operation. This paper presents a comprehensive review on the recent progress and challenges of III-nitrides based ISBT from the perspectives of materials, structures, devices, and applications, with a focus on nonpolar and semipolar III-nitrides. Various device structures have been demonstrated for III-nitrides based ISBT, including quantum wells, dots, and wires, among which AlGaN/GaN quantum wells are the most widely used. The effects of device parameters, crystal orientations, and doping on the ISBT properties of AlGaN/GaN quantum wells are discussed. Although the room-temperature operation is still elusive, theoretical and experimental studies show that nonpolar and semipolar III-nitrides based ISBT exhibits tunable ISBT wavelength from far-IR to THz spectral range with higher efficiency compared with polar c-plane ISBT. This review can serve as a gateway to and an important reference for the recent progress and challenges of III-nitrides based ISBT and its potential applications in sensing, communication, ultrafast optoelectronics, and integrated photonics.},
doi = {10.1063/5.0088021},
journal = {Journal of Applied Physics},
number = 21,
volume = 131,
place = {United States},
year = {Tue Jun 07 00:00:00 EDT 2022},
month = {Tue Jun 07 00:00:00 EDT 2022}
}
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Ultrafast relaxation and optical saturation of intraband absorption of GaN/AlN quantum dots
journal, March 2009

  • Nevou, L.; Mangeney, J.; Tchernycheva, M.
  • Applied Physics Letters, Vol. 94, Issue 13
  • DOI: 10.1063/1.3114424

Non-polar m -plane intersubband based InGaN/(Al)GaN quantum well infrared photodetectors
journal, July 2013

  • Pesach, A.; Gross, E.; Huang, C. -Y.
  • Applied Physics Letters, Vol. 103, Issue 2
  • DOI: 10.1063/1.4813395

Interband and intersubband optical characterization of semipolar (112¯2)-oriented GaN/AlN multiple-quantum-well structures
journal, September 2008

  • Lahourcade, L.; Kandaswamy, P. K.; Renard, J.
  • Applied Physics Letters, Vol. 93, Issue 11
  • DOI: 10.1063/1.2978250

Room temperature demonstration of GaN∕AlN quantum dot intraband infrared photodetector at fiber-optics communication wavelength
journal, April 2006

  • Vardi, A.; Akopian, N.; Bahir, G.
  • Applied Physics Letters, Vol. 88, Issue 14
  • DOI: 10.1063/1.2186108

Far-infrared intersubband photodetectors based on double-step III-nitride quantum wells
journal, June 2012

  • Sudradjat, Faisal F.; Zhang, Wei; Woodward, Jeffrey
  • Applied Physics Letters, Vol. 100, Issue 24
  • DOI: 10.1063/1.4729470

Effect of doping on the far-infrared intersubband transitions in nonpolar m -plane GaN/AlGaN heterostructures
journal, February 2016

Systematic experimental and theoretical investigation of intersubband absorption in Ga N ∕ Al N quantum wells
journal, March 2006

Intersubband transitions in nonpolar GaN/Al(Ga)N heterostructures in the short- and mid-wavelength infrared regions
journal, July 2015

  • Lim, C. B.; Beeler, M.; Ajay, A.
  • Journal of Applied Physics, Vol. 118, Issue 1
  • DOI: 10.1063/1.4926423

Electron Scattering Rates in AlGaN/GaN Quantum Wells for 1.55-µm Inter-Subband Transition
journal, April 1998

  • Suzuki, Nobuo; Iizuka, Norio
  • Japanese Journal of Applied Physics, Vol. 37, Issue Part 2, No. 4A
  • DOI: 10.1143/JJAP.37.L369
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