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Title: Disorder-Induced Magnetotransport Anomalies in Amorphous and Textured Co 1– x Si x Semimetal Thin Films

Abstract

In recent times the chiral semimetal cobalt monosilicide (CoSi) has emerged as a prototypical, nearly ideal topological conductor hosting giant, topologically protected Fermi arcs. Exotic topological quantum properties have already been identified in CoSi bulk single crystals. However, CoSi is also known for being prone to intrinsic disorder and inhomogeneities, which, despite topological protection, risk jeopardizing its topological transport features. Alternatively, topology may be stabilized by disorder, suggesting the tantalizing possibility of an amorphous variant of a topological metal, yet to be discovered. In this respect, understanding how microstructure and stoichiometry affect magnetotransport properties is of pivotal importance, particularly in case of low-dimensional CoSi thin films and devices. Here we comprehensively investigate the magnetotransport and magnetic properties of ≈25 nm Co1–xSix thin films grown on a MgO substrate with controlled film microstructure (amorphous vs textured) and chemical composition (0.40 < x < 0.60). The resistivity of Co1–xSix thin films is nearly insensitive to the film microstructure and displays a progressive evolution from metallic-like (dρxx/dT > 0) to semiconducting-like (dρxx/dT < 0) regimes of conduction upon increasing the silicon content. A variety of anomalies in the magnetotransport properties, comprising for instance signatures consistent with quantum localization and electron–electron interactions, anomalous Hallmore » and Kondo effects, and the occurrence of magnetic exchange interactions, are attributable to the prominent influence of intrinsic structural and chemical disorder. Our systematic survey brings to attention the complexity and the challenges involved in the prospective exploitation of the topological chiral semimetal CoSi in nanoscale thin films and devices.« less

Authors:
ORCiD logo [1];  [1];  [1];  [2];  [1];  [3];  [4];  [4];  [4];  [4];  [5];  [5];  [2];  [5];  [5];  [1]; ORCiD logo [1]; ORCiD logo [1]
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  1. IBM Research Europe − Zurich, Säumerstrasse 4, 8803 Rüschlikon, Switzerland
  2. Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Strasse 40, 01187 Dresden, Germany
  3. IBM Research-Almaden Research Center, 650 Harry Road, San Jose, California 95120, United States
  4. IBM T.J. Watson Research Center−38-251, 1101 Kitchawan Road, Yorktown Heights, New York 10598, United States
  5. Université Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, 38000 Grenoble, France
Publication Date:
Research Org.:
IBM Zurich Research (Switzerland)
Sponsoring Org.:
USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF)
OSTI Identifier:
1971414
Alternate Identifier(s):
OSTI ID: 1974726
Grant/Contract Number:  
SC0012704
Resource Type:
Published Article
Journal Name:
ACS Applied Electronic Materials
Additional Journal Information:
Journal Name: ACS Applied Electronic Materials Journal Volume: 5 Journal Issue: 5; Journal ID: ISSN 2637-6113
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; CoSi; topological semimetals; amorphous thin films; magnetotransport; Hall effect; carrier dynamics; electrical conductivity; magnetic properties; silicon

Citation Formats

Molinari, Alan, Balduini, Federico, Rocchino, Lorenzo, Wawrzyńczak, Rafał, Sousa, Marilyne, Bui, Holt, Lavoie, Christian, Stanic, Vesna, Jordan-Sweet, Jean, Hopstaken, Marinus, Tchoumakov, Serguei, Franca, Selma, Gooth, Johannes, Fratini, Simone, Grushin, Adolfo G., Zota, Cezar, Gotsmann, Bernd, and Schmid, Heinz. Disorder-Induced Magnetotransport Anomalies in Amorphous and Textured Co 1– x Si x Semimetal Thin Films. United States: N. p., 2023. Web. doi:10.1021/acsaelm.3c00095.
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Molinari, Alan, Balduini, Federico, Rocchino, Lorenzo, Wawrzyńczak, Rafał, Sousa, Marilyne, Bui, Holt, Lavoie, Christian, Stanic, Vesna, Jordan-Sweet, Jean, Hopstaken, Marinus, Tchoumakov, Serguei, Franca, Selma, Gooth, Johannes, Fratini, Simone, Grushin, Adolfo G., Zota, Cezar, Gotsmann, Bernd, & Schmid, Heinz. Disorder-Induced Magnetotransport Anomalies in Amorphous and Textured Co 1– x Si x Semimetal Thin Films. United States. https://doi.org/10.1021/acsaelm.3c00095
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Molinari, Alan, Balduini, Federico, Rocchino, Lorenzo, Wawrzyńczak, Rafał, Sousa, Marilyne, Bui, Holt, Lavoie, Christian, Stanic, Vesna, Jordan-Sweet, Jean, Hopstaken, Marinus, Tchoumakov, Serguei, Franca, Selma, Gooth, Johannes, Fratini, Simone, Grushin, Adolfo G., Zota, Cezar, Gotsmann, Bernd, and Schmid, Heinz. Tue . "Disorder-Induced Magnetotransport Anomalies in Amorphous and Textured Co 1– x Si x Semimetal Thin Films". United States. https://doi.org/10.1021/acsaelm.3c00095.
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@article{osti_1971414,
title = {Disorder-Induced Magnetotransport Anomalies in Amorphous and Textured Co 1– x Si x Semimetal Thin Films},
author = {Molinari, Alan and Balduini, Federico and Rocchino, Lorenzo and Wawrzyńczak, Rafał and Sousa, Marilyne and Bui, Holt and Lavoie, Christian and Stanic, Vesna and Jordan-Sweet, Jean and Hopstaken, Marinus and Tchoumakov, Serguei and Franca, Selma and Gooth, Johannes and Fratini, Simone and Grushin, Adolfo G. and Zota, Cezar and Gotsmann, Bernd and Schmid, Heinz},
abstractNote = {In recent times the chiral semimetal cobalt monosilicide (CoSi) has emerged as a prototypical, nearly ideal topological conductor hosting giant, topologically protected Fermi arcs. Exotic topological quantum properties have already been identified in CoSi bulk single crystals. However, CoSi is also known for being prone to intrinsic disorder and inhomogeneities, which, despite topological protection, risk jeopardizing its topological transport features. Alternatively, topology may be stabilized by disorder, suggesting the tantalizing possibility of an amorphous variant of a topological metal, yet to be discovered. In this respect, understanding how microstructure and stoichiometry affect magnetotransport properties is of pivotal importance, particularly in case of low-dimensional CoSi thin films and devices. Here we comprehensively investigate the magnetotransport and magnetic properties of ≈25 nm Co1–xSix thin films grown on a MgO substrate with controlled film microstructure (amorphous vs textured) and chemical composition (0.40 < x < 0.60). The resistivity of Co1–xSix thin films is nearly insensitive to the film microstructure and displays a progressive evolution from metallic-like (dρxx/dT > 0) to semiconducting-like (dρxx/dT < 0) regimes of conduction upon increasing the silicon content. A variety of anomalies in the magnetotransport properties, comprising for instance signatures consistent with quantum localization and electron–electron interactions, anomalous Hall and Kondo effects, and the occurrence of magnetic exchange interactions, are attributable to the prominent influence of intrinsic structural and chemical disorder. Our systematic survey brings to attention the complexity and the challenges involved in the prospective exploitation of the topological chiral semimetal CoSi in nanoscale thin films and devices.},
doi = {10.1021/acsaelm.3c00095},
journal = {ACS Applied Electronic Materials},
number = 5,
volume = 5,
place = {United States},
year = {Tue Apr 25 00:00:00 EDT 2023},
month = {Tue Apr 25 00:00:00 EDT 2023}
}
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