Charged Domain Wall and Polar Vortex Topologies in a Room-Temperature Magnetoelectric Multiferroic Thin Film
Abstract
Multiferroic topologies are an emerging solution for future low-power magnetic nanoelectronics due to their combined tuneable functionality and mobility. Here, we show that in addition to being magnetoelectric multiferroic at room temperature, thin-film Aurivillius phase Bi6TixFeyMnzO18 is an ideal material platform for both domain wall and vortex topologybased nanoelectronic devices. Utilizing atomic-resolution electron microscopy, we reveal the presence and structure of 180°-type charged head-to-head and tail-to-tail domain walls passing throughout the thin film. Theoretical calculations confirm the subunit cell cation site preference and charged domain wall energetics for Bi6TixFeyMnzO18. Finally, we show that polar vortex-type topologies also form at out-of-phase boundaries of stacking faults when internal strain and electrostatic energy gradients are altered. This study could pave the way for controlled polar vortex topology formation via strain engineering in other multiferroic thin films. Moreover, these results confirm that the subunit cell topological features play an important role in controlling the charge and spin state of Aurivillius phase films and other multiferroic heterostructures.
- Authors:
-
- Department of Physics, Bernal Institute, School of Natural Sciences, University of Limerick, Limerick V94 T9PX, Ireland
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Advanced Microscopy Laboratory & AMBER, Trinity College Dublin, Dublin D02 PN40, Ireland
- Tyndall National Institute, University College Cork, Cork T12 R5CP, Ireland
- Advanced Microscopy Laboratory & AMBER, Trinity College Dublin, Dublin D02 PN40, Ireland, School of Chemistry, Trinity College Dublin, Dublin D02 PN40, Ireland
- Department of Physics, Bernal Institute, School of Natural Sciences, University of Limerick, Limerick V94 T9PX, Ireland, Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ, U.K., London Centre for Nanotechnology, Imperial College London, Exhibition Road, London SW7 2AZ, U.K.
- Publication Date:
- Research Org.:
- Imperial College, London (United Kingdom)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1841031
- Alternate Identifier(s):
- OSTI ID: 1843774
- Grant/Contract Number:
- AC02-05CH11231; USI 120
- Resource Type:
- Published Article
- Journal Name:
- ACS Applied Materials and Interfaces
- Additional Journal Information:
- Journal Name: ACS Applied Materials and Interfaces Journal Volume: 14 Journal Issue: 4; Journal ID: ISSN 1944-8244
- Publisher:
- American Chemical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; multiferroic; polar; domain walls; topologies; vorte; , thin film; layers; magnetic properties; transition metals; polarization; perovskites
Citation Formats
Moore, Kalani, O’Connell, Eoghan N., Griffin, Sinéad M., Downing, Clive, Colfer, Louise, Schmidt, Michael, Nicolosi, Valeria, Bangert, Ursel, Keeney, Lynette, and Conroy, Michele. Charged Domain Wall and Polar Vortex Topologies in a Room-Temperature Magnetoelectric Multiferroic Thin Film. United States: N. p., 2022.
Web. doi:10.1021/acsami.1c17383.
Moore, Kalani, O’Connell, Eoghan N., Griffin, Sinéad M., Downing, Clive, Colfer, Louise, Schmidt, Michael, Nicolosi, Valeria, Bangert, Ursel, Keeney, Lynette, & Conroy, Michele. Charged Domain Wall and Polar Vortex Topologies in a Room-Temperature Magnetoelectric Multiferroic Thin Film. United States. https://doi.org/10.1021/acsami.1c17383
Moore, Kalani, O’Connell, Eoghan N., Griffin, Sinéad M., Downing, Clive, Colfer, Louise, Schmidt, Michael, Nicolosi, Valeria, Bangert, Ursel, Keeney, Lynette, and Conroy, Michele. Wed .
"Charged Domain Wall and Polar Vortex Topologies in a Room-Temperature Magnetoelectric Multiferroic Thin Film". United States. https://doi.org/10.1021/acsami.1c17383.
@article{osti_1841031,
title = {Charged Domain Wall and Polar Vortex Topologies in a Room-Temperature Magnetoelectric Multiferroic Thin Film},
author = {Moore, Kalani and O’Connell, Eoghan N. and Griffin, Sinéad M. and Downing, Clive and Colfer, Louise and Schmidt, Michael and Nicolosi, Valeria and Bangert, Ursel and Keeney, Lynette and Conroy, Michele},
abstractNote = {Multiferroic topologies are an emerging solution for future low-power magnetic nanoelectronics due to their combined tuneable functionality and mobility. Here, we show that in addition to being magnetoelectric multiferroic at room temperature, thin-film Aurivillius phase Bi6TixFeyMnzO18 is an ideal material platform for both domain wall and vortex topologybased nanoelectronic devices. Utilizing atomic-resolution electron microscopy, we reveal the presence and structure of 180°-type charged head-to-head and tail-to-tail domain walls passing throughout the thin film. Theoretical calculations confirm the subunit cell cation site preference and charged domain wall energetics for Bi6TixFeyMnzO18. Finally, we show that polar vortex-type topologies also form at out-of-phase boundaries of stacking faults when internal strain and electrostatic energy gradients are altered. This study could pave the way for controlled polar vortex topology formation via strain engineering in other multiferroic thin films. Moreover, these results confirm that the subunit cell topological features play an important role in controlling the charge and spin state of Aurivillius phase films and other multiferroic heterostructures.},
doi = {10.1021/acsami.1c17383},
journal = {ACS Applied Materials and Interfaces},
number = 4,
volume = 14,
place = {United States},
year = {Wed Jan 19 00:00:00 EST 2022},
month = {Wed Jan 19 00:00:00 EST 2022}
}
https://doi.org/10.1021/acsami.1c17383
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