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Title: Decoupling the metal insulator transition and crystal field effects of VO2

Abstract

VO2 is a highly correlated electron system which has a metal-to-insulator transition (MIT) with a dramatic change of conductivity accompanied by a first-order structural phase transition (SPT) near room temperature. The origin of the MIT is still controversial and there is ongoing debate over whether an SPT induces the MIT and whether the Tc can be engineered using artificial parameters. We examined the electrical and local structural properties of Cr- and Co-ion implanted VO2 (Cr-VO2 and Co-VO2) films using temperature-dependent resistance and X-ray absorption fine structure (XAFS) measurements at the V K edge. The temperature-dependent electrical resistance measurements of both Cr-VO2 and Co-VO2 films showed sharp MIT features. The Tc values of the Cr-VO2 and Co-VO2 films first decreased and then increased relative to that of pristine VO2 as the ion flux was increased. The pre-edge peak of the V K edge from the Cr-VO2 films with a Cr ion flux ≥ 1013 ions/cm2 showed no temperature-dependent behavior, implying no changes in the local density of states of V 3d t2g and eg orbitals during MIT. Extended XAFS (EXAFS) revealed that implanted Cr and Co ions and their tracks caused a substantial amount of structural disorder and distortion at bothmore » vanadium and oxygen sites. The resistance and XAFS measurements revealed that VO2 experiences a sharp MIT when the distance of V–V pairs undergoes an SPT without any transitions in either the VO6 octahedrons or the V 3d t2g and eg states. This indicates that the MIT of VO2 occurs with no changes of the crystal fields.« less

Authors:
 [1];  [2];  [3];  [4];  [2]
+ Show Author Affiliations
  1. Jeonbuk National University, Jeonju (Korea). Institute of Fusion Science, and Institute of Science Education; Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
  2. Jeonbuk National University, Jeonju (Korea). Institute of Fusion Science, and Institute of Science Education
  3. Korea Atomic Energy Research Institute, Gyoungju (Korea). Korea Multi-purpose Accelerator Complex (KOMAC)
  4. Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC); National Research Foundation of Korea (NRF); Canadian Light Source
OSTI Identifier:
1797799
Grant/Contract Number:  
AC02-06CH11357; 2017K1A3A7A09016390; 2020K1A3A7A09080403
Resource Type:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 11; Journal Issue: 1; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Hwang, In-Hui, Park, Chang-In, Yeo, Sunmog, Sun, Cheng-Jun, and Han, Sang-Wook. Decoupling the metal insulator transition and crystal field effects of VO2. United States: N. p., 2021. Web. doi:10.1038/s41598-021-82588-4.
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Hwang, In-Hui, Park, Chang-In, Yeo, Sunmog, Sun, Cheng-Jun, & Han, Sang-Wook. Decoupling the metal insulator transition and crystal field effects of VO2. United States. https://doi.org/10.1038/s41598-021-82588-4
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Hwang, In-Hui, Park, Chang-In, Yeo, Sunmog, Sun, Cheng-Jun, and Han, Sang-Wook. Thu . "Decoupling the metal insulator transition and crystal field effects of VO2". United States. https://doi.org/10.1038/s41598-021-82588-4. https://www.osti.gov/servlets/purl/1797799.
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@article{osti_1797799,
title = {Decoupling the metal insulator transition and crystal field effects of VO2},
author = {Hwang, In-Hui and Park, Chang-In and Yeo, Sunmog and Sun, Cheng-Jun and Han, Sang-Wook},
abstractNote = {VO2 is a highly correlated electron system which has a metal-to-insulator transition (MIT) with a dramatic change of conductivity accompanied by a first-order structural phase transition (SPT) near room temperature. The origin of the MIT is still controversial and there is ongoing debate over whether an SPT induces the MIT and whether the Tc can be engineered using artificial parameters. We examined the electrical and local structural properties of Cr- and Co-ion implanted VO2 (Cr-VO2 and Co-VO2) films using temperature-dependent resistance and X-ray absorption fine structure (XAFS) measurements at the V K edge. The temperature-dependent electrical resistance measurements of both Cr-VO2 and Co-VO2 films showed sharp MIT features. The Tc values of the Cr-VO2 and Co-VO2 films first decreased and then increased relative to that of pristine VO2 as the ion flux was increased. The pre-edge peak of the V K edge from the Cr-VO2 films with a Cr ion flux ≥ 1013 ions/cm2 showed no temperature-dependent behavior, implying no changes in the local density of states of V 3d t2g and eg orbitals during MIT. Extended XAFS (EXAFS) revealed that implanted Cr and Co ions and their tracks caused a substantial amount of structural disorder and distortion at both vanadium and oxygen sites. The resistance and XAFS measurements revealed that VO2 experiences a sharp MIT when the distance of V–V pairs undergoes an SPT without any transitions in either the VO6 octahedrons or the V 3d t2g and eg states. This indicates that the MIT of VO2 occurs with no changes of the crystal fields.},
doi = {10.1038/s41598-021-82588-4},
journal = {Scientific Reports},
number = 1,
volume = 11,
place = {United States},
year = {Thu Feb 04 00:00:00 EST 2021},
month = {Thu Feb 04 00:00:00 EST 2021}
}
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