Competition between magnetic order and charge localization in Na2IrO3 thin crystal devices thin crystal devices
Abstract
Spin orbit assisted Mott insulators such as sodium iridate (Na2IrO3) have been an important subject of study in recent years. In these materials, the interplay of electronic correlations, spin-orbit coupling, crystal field effects, and a honeycomb arrangement of ions bring exciting ground states, predicted in the frame of the Kitaev model. The insulating character of Na2IrO3 has hampered its integration to an electronic device, desirable for applications, such as the manipulation of quasiparticles interesting for topological quantum computing. Here we show through electronic transport measurements supported by angle-resolved photoemission spectroscopy (ARPES) experiments, that electronic transport in Na2IrO3 is ruled by variable range hopping and it is strongly dependent on the magnetic ordering transition known for bulk Na2IrO3, as well as on external electric fields. Furthermore, electronic transport measurements allow us to deduce a value for the localization length and the density of states in our Na2IrO3 thin crystal devices, and offer an alternative approach to study insulating 2D-materials.
- Authors:
-
- California State Univ. (CalState), Long Beach, CA (United States)
- Univ. of California, Berkeley, CA (United States)
- Harvey Mudd College, Claremont, CA (United States)
- Publication Date:
- Research Org.:
- California State Univ. (CalState), Long Beach, CA (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); National Institutes of Health (NIH)
- OSTI Identifier:
- 1782486
- Alternate Identifier(s):
- OSTI ID: 1676377
- Grant/Contract Number:
- AC02-05CH11231; SC0018154; DGE 1752814; UL1GM118979; TL4GM118980; RL5GM118978; T34GM008074
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review B
- Additional Journal Information:
- Journal Volume: 101; Journal Issue: 23; Journal ID: ISSN 2469-9950
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 77 NANOSCIENCE AND NANOTECHNOLOGY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Density of states; electrical conductivity; electronic structure; localization; transport phenomena; devices; Mott insulators; strongly correlated systems; angle-resolved photoemission spectroscopy; atomic force microscopy; crystal growth; photoemission spectroscopy; resistivity measurements; scanning electron microscopy; transport techniques
Citation Formats
Rodriguez, Josue, Lopez, Gilbert, Ramirez, Francisco, Breznay, Nicholas P., Kealhofer, Robert, Nagarajan, Vikram, Latzke, Drew, Wilson, Samantha, Marrufo, Naomy, Santiago, Peter, Lara, Jared, Diego, Amirari, Molina, Everardo, Rosser, David, Tavassol, Hadi, Lanzara, Alessandra, Analytis, James G., and Ojeda-Aristizabal, Claudia. Competition between magnetic order and charge localization in Na2IrO3 thin crystal devices thin crystal devices. United States: N. p., 2020.
Web. doi:10.1103/physrevb.101.235415.
Rodriguez, Josue, Lopez, Gilbert, Ramirez, Francisco, Breznay, Nicholas P., Kealhofer, Robert, Nagarajan, Vikram, Latzke, Drew, Wilson, Samantha, Marrufo, Naomy, Santiago, Peter, Lara, Jared, Diego, Amirari, Molina, Everardo, Rosser, David, Tavassol, Hadi, Lanzara, Alessandra, Analytis, James G., & Ojeda-Aristizabal, Claudia. Competition between magnetic order and charge localization in Na2IrO3 thin crystal devices thin crystal devices. United States. https://doi.org/10.1103/physrevb.101.235415
Rodriguez, Josue, Lopez, Gilbert, Ramirez, Francisco, Breznay, Nicholas P., Kealhofer, Robert, Nagarajan, Vikram, Latzke, Drew, Wilson, Samantha, Marrufo, Naomy, Santiago, Peter, Lara, Jared, Diego, Amirari, Molina, Everardo, Rosser, David, Tavassol, Hadi, Lanzara, Alessandra, Analytis, James G., and Ojeda-Aristizabal, Claudia. Mon .
"Competition between magnetic order and charge localization in Na2IrO3 thin crystal devices thin crystal devices". United States. https://doi.org/10.1103/physrevb.101.235415. https://www.osti.gov/servlets/purl/1782486.
@article{osti_1782486,
title = {Competition between magnetic order and charge localization in Na2IrO3 thin crystal devices thin crystal devices},
author = {Rodriguez, Josue and Lopez, Gilbert and Ramirez, Francisco and Breznay, Nicholas P. and Kealhofer, Robert and Nagarajan, Vikram and Latzke, Drew and Wilson, Samantha and Marrufo, Naomy and Santiago, Peter and Lara, Jared and Diego, Amirari and Molina, Everardo and Rosser, David and Tavassol, Hadi and Lanzara, Alessandra and Analytis, James G. and Ojeda-Aristizabal, Claudia},
abstractNote = {Spin orbit assisted Mott insulators such as sodium iridate (Na2IrO3) have been an important subject of study in recent years. In these materials, the interplay of electronic correlations, spin-orbit coupling, crystal field effects, and a honeycomb arrangement of ions bring exciting ground states, predicted in the frame of the Kitaev model. The insulating character of Na2IrO3 has hampered its integration to an electronic device, desirable for applications, such as the manipulation of quasiparticles interesting for topological quantum computing. Here we show through electronic transport measurements supported by angle-resolved photoemission spectroscopy (ARPES) experiments, that electronic transport in Na2IrO3 is ruled by variable range hopping and it is strongly dependent on the magnetic ordering transition known for bulk Na2IrO3, as well as on external electric fields. Furthermore, electronic transport measurements allow us to deduce a value for the localization length and the density of states in our Na2IrO3 thin crystal devices, and offer an alternative approach to study insulating 2D-materials.},
doi = {10.1103/physrevb.101.235415},
journal = {Physical Review B},
number = 23,
volume = 101,
place = {United States},
year = {Mon Jun 08 00:00:00 EDT 2020},
month = {Mon Jun 08 00:00:00 EDT 2020}
}
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