Design of semiconductor surface pits for fabrication of regular arrays of quantum dots and nanorings
Abstract
We report a systematic computational study on the formation of complex nanostructures consisting of quantum dots and nanorings on surfaces of coherently strained thin films grown epitaxially on pit-patterned substrates. The analysis is based on self-consistent dynamical simulations according to a film surface evolution model that has been validated experimentally by comparison of its predictions with experimental observations on Ge films grown on Si pit-patterned substrates and is supported by linear stability theory that explains the film surface nanopattern formation as the outcome of a Stranski-Krastanow instability. Emphasis is placed on the design of conical pit patterns and the effects on the resulting film surface nanopattern of varying geometrical design parameters including film thickness, pit-pattern period, pit depth, pit opening diameter, and pit wall inclination. We demonstrate that varying the pit opening diameter and the pit wall slope leads to formation of complex nanostructures inside the pits of a regular pit pattern on the film surface, which include quantum dots, as well as single nanorings and multiple concentric nanorings that may or may not surround a central quantum dot inside each pit. Our simulation predictions demonstrate that the ordered nanostructure patterns forming on the film surface can be controlled preciselymore »
- Authors:
-
- Univ. of Massachusetts, Amherst, MA (United States). Dept. of Chemical Engineering
- Publication Date:
- Research Org.:
- Univ. of Massachusetts, Amherst, MA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 1609857
- Grant/Contract Number:
- FG02-07ER46407
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 125; Journal Issue: 4; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; Physics; Nanofabrication; Self assembly; Numerical methods; Surface morphology; Linear stability analysis; Epitaxy; Complex nanostructures; Quantum dots; Thin films; Semiconductors
Citation Formats
Kumar, Ashish, Chen, Chao-Shou, and Maroudas, Dimitrios. Design of semiconductor surface pits for fabrication of regular arrays of quantum dots and nanorings. United States: N. p., 2019.
Web. doi:10.1063/1.5064807.
Kumar, Ashish, Chen, Chao-Shou, & Maroudas, Dimitrios. Design of semiconductor surface pits for fabrication of regular arrays of quantum dots and nanorings. United States. https://doi.org/10.1063/1.5064807
Kumar, Ashish, Chen, Chao-Shou, and Maroudas, Dimitrios. Wed .
"Design of semiconductor surface pits for fabrication of regular arrays of quantum dots and nanorings". United States. https://doi.org/10.1063/1.5064807. https://www.osti.gov/servlets/purl/1609857.
@article{osti_1609857,
title = {Design of semiconductor surface pits for fabrication of regular arrays of quantum dots and nanorings},
author = {Kumar, Ashish and Chen, Chao-Shou and Maroudas, Dimitrios},
abstractNote = {We report a systematic computational study on the formation of complex nanostructures consisting of quantum dots and nanorings on surfaces of coherently strained thin films grown epitaxially on pit-patterned substrates. The analysis is based on self-consistent dynamical simulations according to a film surface evolution model that has been validated experimentally by comparison of its predictions with experimental observations on Ge films grown on Si pit-patterned substrates and is supported by linear stability theory that explains the film surface nanopattern formation as the outcome of a Stranski-Krastanow instability. Emphasis is placed on the design of conical pit patterns and the effects on the resulting film surface nanopattern of varying geometrical design parameters including film thickness, pit-pattern period, pit depth, pit opening diameter, and pit wall inclination. We demonstrate that varying the pit opening diameter and the pit wall slope leads to formation of complex nanostructures inside the pits of a regular pit pattern on the film surface, which include quantum dots, as well as single nanorings and multiple concentric nanorings that may or may not surround a central quantum dot inside each pit. Our simulation predictions demonstrate that the ordered nanostructure patterns forming on the film surface can be controlled precisely by tuning the geometrical parameters of the pits on the pit-patterned substrate. Our findings have important implications for designing optimal semiconductor surface patterns toward enabling future nanofabrication technologies.},
doi = {10.1063/1.5064807},
journal = {Journal of Applied Physics},
number = 4,
volume = 125,
place = {United States},
year = {Wed Jan 30 00:00:00 EST 2019},
month = {Wed Jan 30 00:00:00 EST 2019}
}
Web of Science
Works referenced in this record:
Potential performance of indium-nitride-based devices
journal, April 2006
- O’Leary, Stephen K.; Foutz, Brian E.; Shur, Michael S.
- Applied Physics Letters, Vol. 88, Issue 15
Morphological evolution of Ge/Si(001) quantum dot rings formed at the rim of wet-etched pits
journal, October 2012
- Grydlik, Martyna; Brehm, Moritz; Schäffler, Friedrich
- Nanoscale Research Letters, Vol. 7, Issue 1
Germanium growth on electron beam lithography patterned Si3N4/Si(001) substrate using molecular beam epitaxy
journal, April 2018
- Sarkar, Subhendu Sinha; Katiyar, Ajit K.; Sarkar, Arijit
- Applied Surface Science, Vol. 437
Quantum-Dot-Based Photoelectrochemical Sensors for Chemical and Biological Detection
journal, January 2013
- Yue, Zhao; Lisdat, Fred; Parak, Wolfgang J.
- ACS Applied Materials & Interfaces, Vol. 5, Issue 8
Asymptotic derivation of the glued-wetting-layer model and contact-angle condition for Stranski-Krastanow islands
journal, January 1999
- Spencer, B. J.
- Physical Review B, Vol. 59, Issue 3
Novel strain-induced defect in thin molecular-beam epitaxy layers
journal, October 1989
- LeGoues, F. K.; Copel, M.; Tromp, R.
- Physical Review Letters, Vol. 63, Issue 17
Theory of multiple quantum dot formation in strained-layer heteroepitaxy
journal, July 2016
- Du, Lin; Maroudas, Dimitrios
- Applied Physics Letters, Vol. 109, Issue 2
Photoluminescence investigation of strictly ordered Ge dots grown on pit-patterned Si substrates
journal, May 2015
- Brehm, Moritz; Grydlik, Martyna; Tayagaki, Takeshi
- Nanotechnology, Vol. 26, Issue 22
Recipes for the fabrication of strictly ordered Ge islands on pit-patterned Si(001) substrates
journal, February 2013
- Grydlik, Martyna; Langer, Gregor; Fromherz, Thomas
- Nanotechnology, Vol. 24, Issue 10
InGaAs quantum dot molecules around self-assembled GaAs nanomound templates
journal, November 2006
- Lee, J. H.; Wang, Zh. M.; Strom, N. W.
- Applied Physics Letters, Vol. 89, Issue 20
Self-assembled nanoholes, lateral quantum-dot molecules, and rolled-up nanotubes
journal, September 2002
- Schmidt, O. G.; Deneke, C.; Kiravittaya, S.
- IEEE Journal of Selected Topics in Quantum Electronics, Vol. 8, Issue 5
Site-controlled crystalline InN growth from the V-pits of a GaN substrate
journal, May 2017
- Kuo, Chien-Ting; Hsu, Lung-Hsing; Lai, Yung-Yu
- Applied Surface Science, Vol. 405
Growth of quantum dots on pit-patterns
journal, September 2015
- Aqua, Jean-Noël; Xu, Xianbin
- Surface Science, Vol. 639
THz generation from InN films due to destructive interference between optical rectification and photocurrent surge
journal, December 2009
- Xu, Guibao; Ding, Yujie J.; Zhao, Hongping
- Semiconductor Science and Technology, Vol. 25, Issue 1
Coarsening of Self-Assembled Ge Quantum Dots on Si(001)
journal, February 1998
- Ross, F. M.; Tersoff, J.; Tromp, R. M.
- Physical Review Letters, Vol. 80, Issue 5
Controlled InAs quantum dot nucleation on faceted nanopatterned pyramids
journal, April 2007
- Wong, P. S.; Balakrishnan, G.; Nuntawong, N.
- Applied Physics Letters, Vol. 90, Issue 18
Single‐domain magnetic pillar array of 35 nm diameter and 65 Gbits/in. 2 density for ultrahigh density quantum magnetic storage
journal, November 1994
- Chou, Stephen Y.; Wei, Mark S.; Krauss, Peter R.
- Journal of Applied Physics, Vol. 76, Issue 10
Self-assembly and ordering mechanisms of Ge islands on prepatterned Si(001)
journal, February 2008
- Pascale, A.; Berbezier, I.; Ronda, A.
- Physical Review B, Vol. 77, Issue 7
Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
journal, April 1990
- Eaglesham, D. J.; Cerullo, M.
- Physical Review Letters, Vol. 64, Issue 16
Current-induced surface roughness reduction in conducting thin films
journal, March 2017
- Du, Lin; Maroudas, Dimitrios
- Applied Physics Letters, Vol. 110, Issue 10
Kinetics of nanoring formation on surfaces of stressed thin films
journal, August 2018
- Du, Lin; Khenner, Mikhail; Maroudas, Dimitrios
- Physical Review Materials, Vol. 2, Issue 8
Modeling of quantum dot and nanoring pattern formation on pit-patterned semiconductor substrates
journal, July 2018
- Kumar, Ashish; Du, Lin; Maroudas, Dimitrios
- Materials Research Express, Vol. 5, Issue 8
Three-Dimensional Control of Self-Assembled Quantum Dot Configurations
journal, June 2010
- Yakes, Michael K.; Cress, Cory D.; Tischler, Joseph G.
- ACS Nano, Vol. 4, Issue 7
Nonlinear effect of stress and wetting on surface evolution of epitaxial thin films
journal, August 2006
- Pang, Yaoyu; Huang, Rui
- Physical Review B, Vol. 74, Issue 7
Directed self-organization of quantum dots
journal, September 2014
- Aqua, Jean-Noël; Xu, Xianbin
- Physical Review E, Vol. 90, Issue 3
Strain relaxation during the initial stages of growth in Ge/Si(001)
journal, February 1991
- Williams, A. A.; Thornton, J. M. C.; Macdonald, J. E.
- Physical Review B, Vol. 43, Issue 6
Morphological Evolution of Pit-Patterned Si(001) Substrates Driven by Surface-Energy Reduction
journal, September 2017
- Salvalaglio, Marco; Backofen, Rainer; Voigt, Axel
- Nanoscale Research Letters, Vol. 12, Issue 1
Optimization of electrical treatment strategy for surface roughness reduction in conducting thin films
journal, September 2018
- Du, Lin; Maroudas, Dimitrios
- Journal of Applied Physics, Vol. 124, Issue 12
Terahertz Radiation from Nonpolar InN Due to Drift in an Intrinsic In-Plane Electric Field
journal, August 2010
- Metcalfe, Grace D.; Shen, Hongen; Wraback, Michael
- Applied Physics Express, Vol. 3, Issue 9
Towards deterministically controlled InGaAs/GaAs lateral quantum dot molecules
journal, April 2008
- Wang, L.; Rastelli, A.; Kiravittaya, S.
- New Journal of Physics, Vol. 10, Issue 4
Inhibited Spontaneous Emission in Solid-State Physics and Electronics
journal, May 1987
- Yablonovitch, Eli
- Physical Review Letters, Vol. 58, Issue 20, p. 2059-2062
The use of luminescent quantum dots for optical sensing
journal, March 2006
- Costa-Fernández, José M.; Pereiro, Rosario; Sanz-Medel, Alfredo
- TrAC Trends in Analytical Chemistry, Vol. 25, Issue 3
Advanced quantum dot configurations
journal, March 2009
- Kiravittaya, Suwit; Rastelli, Armando; Schmidt, Oliver G.
- Reports on Progress in Physics, Vol. 72, Issue 4
Advanced operator splitting-based semi-implicit spectral method to solve the binary phase-field crystal equations with variable coefficients
journal, March 2009
- Tegze, György; Bansel, Gurvinder; Tóth, Gyula I.
- Journal of Computational Physics, Vol. 228, Issue 5
Theory of Directed Nucleation of Strained Islands on Patterned Substrates
journal, November 2008
- Hu, Hao; Gao, H. J.; Liu, Feng
- Physical Review Letters, Vol. 101, Issue 21
Works referencing / citing this record:
On the formation of multiple quantum dots inside elongated pits on semiconductor films deposited epitaxially on pit-patterned substrates
journal, June 2019
- Chen, Chao-Shou; Kumar, Ashish; Maroudas, Dimitrios
- Materials Research Express, Vol. 6, Issue 8