Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown

Hu, Zongyang; Nomoto, Kazuki; Song, Bo; Zhu, Mingda; Qi, Meng; Pan, Ming; Gao, Xiang; Protasenko, Vladimir; Jena, Debdeep; Xing, Huili Grace

doi:10.1063/1.4937436

Title: Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown

Abstract

Textbook-like device characteristics are demonstrated in vertical GaN p-n diodes grown on bulk GaN substrates. These devices show simultaneously an avalanche breakdown voltage (BV) of >1.4 kV under reverse bias, an ideality factor plateau of ∼2.0 in a forward bias window followed by a near unity ideality factor of 1.1, which are consistently achieved over a temperature range of 300–400 K. At room temperature (RT), the diode with a mesa diameter of 107 μm showed a differential on-resistance Ron of 0.12 mΩcm2, thus resulting in a record figure-of-merit BV2/Ron of ∼16.5 GW/cm2, which is the highest ever demonstrated in any semiconductors. Analytical models are used to fit experimental I-Vs; based on the recombination current with an ideality factor of ∼2.0, a Shockley-Read-Hall lifetime of 12 ns is extracted at RT with an estimated recombination center concentration of 3 × 1015 cm−3.

Authors:

Hu, Zongyang; Nomoto, Kazuki; Song, Bo; Zhu, Mingda;

; Pan, Ming; Gao, Xiang; Protasenko, Vladimir; Jena, Debdeep; Xing, Huili Grace

Publication Date:: Tue Dec 15 00:00:00 EST 2015

Sponsoring Org.:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

OSTI Identifier:: 1420569

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Name: Applied Physics Letters Journal Volume: 107 Journal Issue: 24; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics

Country of Publication:: United States

Language:: English

Citation Formats


                    Hu, Zongyang, Nomoto, Kazuki, Song, Bo, Zhu, Mingda, Qi, Meng, Pan, Ming, Gao, Xiang, Protasenko, Vladimir, Jena, Debdeep, and Xing, Huili Grace. Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown.  United States: N. p., 2015. 
Web.  doi:10.1063/1.4937436.

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                    Hu, Zongyang, Nomoto, Kazuki, Song, Bo, Zhu, Mingda, Qi, Meng, Pan, Ming, Gao, Xiang, Protasenko, Vladimir, Jena, Debdeep, & Xing, Huili Grace. Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown.  United States.  https://doi.org/10.1063/1.4937436

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                    Hu, Zongyang, Nomoto, Kazuki, Song, Bo, Zhu, Mingda, Qi, Meng, Pan, Ming, Gao, Xiang, Protasenko, Vladimir, Jena, Debdeep, and Xing, Huili Grace. Tue .  
"Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown".  United States.  https://doi.org/10.1063/1.4937436.

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@article{osti_1420569,

  title        = {Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown},

  author       = {Hu, Zongyang and Nomoto, Kazuki and Song, Bo and Zhu, Mingda and Qi, Meng and Pan, Ming and Gao, Xiang and Protasenko, Vladimir and Jena, Debdeep and Xing, Huili Grace},

  abstractNote = {Textbook-like device characteristics are demonstrated in vertical GaN p-n diodes grown on bulk GaN substrates. These devices show simultaneously an avalanche breakdown voltage (BV) of >1.4 kV under reverse bias, an ideality factor plateau of ∼2.0 in a forward bias window followed by a near unity ideality factor of 1.1, which are consistently achieved over a temperature range of 300–400 K. At room temperature (RT), the diode with a mesa diameter of 107 μm showed a differential on-resistance Ron of 0.12 mΩcm2, thus resulting in a record figure-of-merit BV2/Ron of ∼16.5 GW/cm2, which is the highest ever demonstrated in any semiconductors. Analytical models are used to fit experimental I-Vs; based on the recombination current with an ideality factor of ∼2.0, a Shockley-Read-Hall lifetime of 12 ns is extracted at RT with an estimated recombination center concentration of 3 × 1015 cm−3.},

  doi          = {10.1063/1.4937436},

  journal      = {Applied Physics Letters},

  number       = 24,

  volume       = 107,

  place        = {United States},

  year         = {Tue Dec 15 00:00:00 EST 2015},

  month        = {Tue Dec 15 00:00:00 EST 2015}

}

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Works referenced in this record:

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Title: Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown

Abstract

Citation Formats

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Minority carrier recombination in heavily-doped silicon journal, June 1983

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Experimental analysis and theoretical model for anomalously high ideality factors (n≫2.0) in AlGaN/GaN p-n junction diodes journal, August 2003

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Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics journal, September 1957

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p-n junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents
journal, November 2010

The rate of radiative recombination in the nitride semiconductors and alloys
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High Voltage Vertical GaN p-n Diodes With Avalanche Capability
journal, October 2013

High Breakdown Voltage AlGaN–GaN HEMTs Achieved by Multiple Field Plates
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Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence
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